Carbon-nanotube-based nonvolatile memory with oxide-nitride-oxide film and nanoscale channel

Won Bong Choi; Soodoo Chae; Eunju Bae; Jo Won Lee; Byoung Ho Cheong; Jae Ryoung Kim; Ju Jin Kim

doi:10.1063/1.1536713

Carbon-nanotube-based nonvolatile memory with oxide-nitride-oxide film and nanoscale channel

Won Bong Choi^*
, Soodoo Chae
, Eunju Bae
, Jo Won Lee
, Byoung Ho Cheong
, Jae Ryoung Kim
, Ju Jin Kim

^*Corresponding author for this work

Department of Physics

Samsung
Jeonbuk National University

Research output: Contribution to journal › Journal article › peer-review

81 Scopus citations

Abstract

A top-gate structure in which the gate electrode was located within the predefined carbon nanotubes (CNT) channel was fabricated. The charges were stored in oxide-nitride-oxide (ONO) traps. The stored charges increased the threshold voltage with quasiquantized energy state. This suggested that the ONO has traps with quasiquantized energy state.

Original language	English
Pages (from-to)	275-277
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	2
DOIs	https://doi.org/10.1063/1.1536713
State	Published - 2003.01.13

Quacquarelli Symonds(QS) Subject Topics

Physics & Astronomy

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10.1063/1.1536713

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title = "Carbon-nanotube-based nonvolatile memory with oxide-nitride-oxide film and nanoscale channel",

abstract = "A top-gate structure in which the gate electrode was located within the predefined carbon nanotubes (CNT) channel was fabricated. The charges were stored in oxide-nitride-oxide (ONO) traps. The stored charges increased the threshold voltage with quasiquantized energy state. This suggested that the ONO has traps with quasiquantized energy state.",

author = "Choi, \{Won Bong\} and Soodoo Chae and Eunju Bae and Lee, \{Jo Won\} and Cheong, \{Byoung Ho\} and Kim, \{Jae Ryoung\} and Kim, \{Ju Jin\}",

year = "2003",

month = jan,

day = "13",

doi = "10.1063/1.1536713",

language = "English",

volume = "82",

pages = "275--277",

journal = "Applied Physics Letters",

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T1 - Carbon-nanotube-based nonvolatile memory with oxide-nitride-oxide film and nanoscale channel

AU - Choi, Won Bong

AU - Chae, Soodoo

AU - Bae, Eunju

AU - Lee, Jo Won

AU - Cheong, Byoung Ho

AU - Kim, Jae Ryoung

AU - Kim, Ju Jin

PY - 2003/1/13

Y1 - 2003/1/13

N2 - A top-gate structure in which the gate electrode was located within the predefined carbon nanotubes (CNT) channel was fabricated. The charges were stored in oxide-nitride-oxide (ONO) traps. The stored charges increased the threshold voltage with quasiquantized energy state. This suggested that the ONO has traps with quasiquantized energy state.

AB - A top-gate structure in which the gate electrode was located within the predefined carbon nanotubes (CNT) channel was fabricated. The charges were stored in oxide-nitride-oxide (ONO) traps. The stored charges increased the threshold voltage with quasiquantized energy state. This suggested that the ONO has traps with quasiquantized energy state.

UR - https://www.scopus.com/pages/publications/0037434186

U2 - 10.1063/1.1536713

DO - 10.1063/1.1536713

M3 - Journal article

AN - SCOPUS:0037434186

SN - 0003-6951

VL - 82

SP - 275

EP - 277

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Carbon-nanotube-based nonvolatile memory with oxide-nitride-oxide film and nanoscale channel

Abstract

Quacquarelli Symonds(QS) Subject Topics

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