Carrier dynamics and activation energy of Cd xZn 1-xTe/ZnTe quantum dots on GaAs and Si substrates

Hong Seok Lee; Sang Youp Yim; Tae Whan Kim; Hong Lee Park

doi:10.1166/jnn.2011.4781

Carrier dynamics and activation energy of Cd _xZn _1-xTe/ZnTe quantum dots on GaAs and Si substrates

Hong Seok Lee^*
, Sang Youp Yim
, Tae Whan Kim
, Hong Lee Park

^*Corresponding author for this work

Department of Physics

Gwangju Institute of Science and Technology
Hanyang University
Yonsei University

Research output: Contribution to journal › Journal article › peer-review

Abstract

We have investigated the carrier dynamics and activation energy of Cd _xZn _1-xTe/ZnTe quantum dots (QDs) on GaAs and Si substrates. The carrier dynamics of QDs on GaAs and Si substrates is studied using time-resolved photoluminescence (PL) measurements, revealing shorter exciton lifetimes of QDs on Si substrate. In particular, the activation energy of electrons confined in QDs on the GaAs substrate, as obtained from temperature-dependent PL spectra, is higher than that of electrons confined in QDs on the Si substrate. Both results confirm that defects and dislocations in QDs on the Si substrate provide nonradiative channels.

Original language	English
Pages (from-to)	7185-7188
Number of pages	4
Journal	Journal of nanoscience and nanotechnology
Volume	11
Issue number	8
DOIs	https://doi.org/10.1166/jnn.2011.4781
State	Published - 2011.08

Keywords

Activation energy
Carrier dynamics
CdZnTe
Quantum dots
Si substrate

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10.1166/jnn.2011.4781

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@article{169fb9347853420f8a34207bb9a62fcb,

title = "Carrier dynamics and activation energy of Cd xZn 1-xTe/ZnTe quantum dots on GaAs and Si substrates",

abstract = "We have investigated the carrier dynamics and activation energy of Cd xZn 1-xTe/ZnTe quantum dots (QDs) on GaAs and Si substrates. The carrier dynamics of QDs on GaAs and Si substrates is studied using time-resolved photoluminescence (PL) measurements, revealing shorter exciton lifetimes of QDs on Si substrate. In particular, the activation energy of electrons confined in QDs on the GaAs substrate, as obtained from temperature-dependent PL spectra, is higher than that of electrons confined in QDs on the Si substrate. Both results confirm that defects and dislocations in QDs on the Si substrate provide nonradiative channels.",

keywords = "Activation energy, Carrier dynamics, CdZnTe, Quantum dots, Si substrate",

author = "Lee, \{Hong Seok\} and Yim, \{Sang Youp\} and Kim, \{Tae Whan\} and Park, \{Hong Lee\}",

year = "2011",

month = aug,

doi = "10.1166/jnn.2011.4781",

language = "English",

volume = "11",

pages = "7185--7188",

journal = "Journal of nanoscience and nanotechnology",

issn = "1533-4880",

number = "8",

}

TY - JOUR

T1 - Carrier dynamics and activation energy of Cd xZn 1-xTe/ZnTe quantum dots on GaAs and Si substrates

AU - Lee, Hong Seok

AU - Yim, Sang Youp

AU - Kim, Tae Whan

AU - Park, Hong Lee

PY - 2011/8

Y1 - 2011/8

N2 - We have investigated the carrier dynamics and activation energy of Cd xZn 1-xTe/ZnTe quantum dots (QDs) on GaAs and Si substrates. The carrier dynamics of QDs on GaAs and Si substrates is studied using time-resolved photoluminescence (PL) measurements, revealing shorter exciton lifetimes of QDs on Si substrate. In particular, the activation energy of electrons confined in QDs on the GaAs substrate, as obtained from temperature-dependent PL spectra, is higher than that of electrons confined in QDs on the Si substrate. Both results confirm that defects and dislocations in QDs on the Si substrate provide nonradiative channels.

AB - We have investigated the carrier dynamics and activation energy of Cd xZn 1-xTe/ZnTe quantum dots (QDs) on GaAs and Si substrates. The carrier dynamics of QDs on GaAs and Si substrates is studied using time-resolved photoluminescence (PL) measurements, revealing shorter exciton lifetimes of QDs on Si substrate. In particular, the activation energy of electrons confined in QDs on the GaAs substrate, as obtained from temperature-dependent PL spectra, is higher than that of electrons confined in QDs on the Si substrate. Both results confirm that defects and dislocations in QDs on the Si substrate provide nonradiative channels.

KW - Activation energy

KW - Carrier dynamics

KW - CdZnTe

KW - Quantum dots

KW - Si substrate

UR - https://www.scopus.com/pages/publications/84863043302

U2 - 10.1166/jnn.2011.4781

DO - 10.1166/jnn.2011.4781

M3 - Journal article

AN - SCOPUS:84863043302

SN - 1533-4880

VL - 11

SP - 7185

EP - 7188

JO - Journal of nanoscience and nanotechnology

JF - Journal of nanoscience and nanotechnology

IS - 8

ER -

Carrier dynamics and activation energy of Cd _xZn _1-xTe/ZnTe quantum dots on GaAs and Si substrates

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Keywords

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