Carrier dynamics and activation energy of CdTe quantum dots in a Cd xZn 1-xTe quantum well

W. I. Han; J. H. Lee; J. S. Yu; J. C. Choi; H. S. Lee

doi:10.1063/1.3669412

Carrier dynamics and activation energy of CdTe quantum dots in a Cd _xZn _1-xTe quantum well

W. I. Han
, J. H. Lee
, J. S. Yu
, J. C. Choi^*
, H. S. Lee

^*Corresponding author for this work

Department of Physics

Yonsei University Wonju
Gwangju Institute of Science and Technology

Research output: Contribution to journal › Journal article › peer-review

14 Scopus citations

Abstract

We investigate the optical properties of CdTe quantum dots (QDs) in a Cd _0.3Zn _0.7Te quantum well (QW) grown on GaAs (100) substrates. Carrier dynamics of CdTe/ZnTe QDs and quantum dots-in-a-well (DWELL) structure is studied using time-resolved photoluminescence (PL) measurements, which show the longer exciton lifetime of the DWELL structure. The activation energy of the electrons confined in the DWELL structure, as obtained from the temperature-dependent PL spectra, was also higher than that of electrons confined in the CdTe/ZnTe QDs. This behavior is attributed to the better capture of carriers into QDs within the surrounding QW.

Original language	English
Article number	231908
Journal	Applied Physics Letters
Volume	99
Issue number	23
DOIs	https://doi.org/10.1063/1.3669412
State	Published - 2011.12.5

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title = "Carrier dynamics and activation energy of CdTe quantum dots in a Cd xZn 1-xTe quantum well",

abstract = "We investigate the optical properties of CdTe quantum dots (QDs) in a Cd 0.3Zn 0.7Te quantum well (QW) grown on GaAs (100) substrates. Carrier dynamics of CdTe/ZnTe QDs and quantum dots-in-a-well (DWELL) structure is studied using time-resolved photoluminescence (PL) measurements, which show the longer exciton lifetime of the DWELL structure. The activation energy of the electrons confined in the DWELL structure, as obtained from the temperature-dependent PL spectra, was also higher than that of electrons confined in the CdTe/ZnTe QDs. This behavior is attributed to the better capture of carriers into QDs within the surrounding QW.",

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T1 - Carrier dynamics and activation energy of CdTe quantum dots in a Cd xZn 1-xTe quantum well

AU - Han, W. I.

AU - Lee, J. H.

AU - Yu, J. S.

AU - Choi, J. C.

AU - Lee, H. S.

PY - 2011/12/5

Y1 - 2011/12/5

N2 - We investigate the optical properties of CdTe quantum dots (QDs) in a Cd 0.3Zn 0.7Te quantum well (QW) grown on GaAs (100) substrates. Carrier dynamics of CdTe/ZnTe QDs and quantum dots-in-a-well (DWELL) structure is studied using time-resolved photoluminescence (PL) measurements, which show the longer exciton lifetime of the DWELL structure. The activation energy of the electrons confined in the DWELL structure, as obtained from the temperature-dependent PL spectra, was also higher than that of electrons confined in the CdTe/ZnTe QDs. This behavior is attributed to the better capture of carriers into QDs within the surrounding QW.

AB - We investigate the optical properties of CdTe quantum dots (QDs) in a Cd 0.3Zn 0.7Te quantum well (QW) grown on GaAs (100) substrates. Carrier dynamics of CdTe/ZnTe QDs and quantum dots-in-a-well (DWELL) structure is studied using time-resolved photoluminescence (PL) measurements, which show the longer exciton lifetime of the DWELL structure. The activation energy of the electrons confined in the DWELL structure, as obtained from the temperature-dependent PL spectra, was also higher than that of electrons confined in the CdTe/ZnTe QDs. This behavior is attributed to the better capture of carriers into QDs within the surrounding QW.

UR - https://www.scopus.com/pages/publications/83455164905

U2 - 10.1063/1.3669412

DO - 10.1063/1.3669412

M3 - Journal article

AN - SCOPUS:83455164905

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 231908

ER -

Carrier dynamics and activation energy of CdTe quantum dots in a Cd _xZn _1-xTe quantum well

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