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Carrier dynamics and activation energy of CdTe/ZnTe nanostructures with different CdTe thicknesses

  • Won Il Han
  • , Ju Hyung Lee
  • , Jin Chul Choi
  • , Hong Seok Lee*
  • *Corresponding author for this work
  • Yonsei University Wonju
  • Jeju National University

Research output: Contribution to journalJournal articlepeer-review

Abstract

We investigate the dimensional transition and optical properties of CdTe/ZnTe nanostructures with various CdTe thicknesses. The excitonic peak corresponding to the transitions from the ground electronic sub-band to the ground heavy-hole band in CdTe/ZnTe nanostructures shows different redshifts with increasing CdTe thickness due to variations in the dimensions of CdTe/ZnTe nanostructures. Time-resolved photoluminescence (PL) measurements used to study the carrier dynamics show that the decay time of 4.0 monolayer (ML) CdTe/ZnTe nanostructures is longer than that of CdTe/ZnTe nanostructures with different CdTe thicknesses. The activation energy of electrons confined in 4.0 ML CdTe/ZnTe nanostructures, as obtained from the temperature-dependent PL spectra, is higher than that of electrons confined in CdTe/ZnTe nanostructures with different CdTe thicknesses. These results indicate that the carrier dynamics and activation energy of CdTe/ZnTe nanostructures are affected by the thickness and dimensions of CdTe/ZnTe nanostructures.

Original languageEnglish
Pages (from-to)307-310
Number of pages4
JournalJournal of Crystal Growth
Volume370
DOIs
StatePublished - 2013.05.1

Keywords

  • A1. Low dimensional structures
  • A1. Nanostructures
  • A3. Atomic layer epitaxy
  • A3. Molecular beam epitaxy
  • B1. Cadmium compounds
  • B2. Semiconducting II-VI materials

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