Carrier dynamics and photon management for improvement in quantum efficiencies of GaN-based visible light-emitting diodes

J. H. Ryou; J. Kim; S. Choi; H. J. Kim; Z. Lochner; M. H. Ji; Md M. Satter; T. Detchprohm; P. D. Yoder; R. D. Dupuis; M. Asadirad; J. P. Liu; J. S. Kim; A. M. Fischere; R. Juday; F. A. Ponce; M. K. Kwon; D. Yuan; R. Guo; S. Das

doi:10.1149/06104.0109ecst

Carrier dynamics and photon management for improvement in quantum efficiencies of GaN-based visible light-emitting diodes

J. H. Ryou
, J. Kim
, S. Choi
, H. J. Kim
, Z. Lochner
, M. H. Ji
, Md M. Satter
, T. Detchprohm
, P. D. Yoder
, R. D. Dupuis
, M. Asadirad
, J. P. Liu
, J. S. Kim
, A. M. Fischere
, R. Juday
, F. A. Ponce
, M. K. Kwon
, D. Yuan
, R. Guo
, S. Das

Information Materials Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Data and analysis are presented employing several new methods to address carrier dynamics and photon management issues in order to improve internal quantum efficiency and light-extraction efficiency of GaN-based light-emitting diodes. For the carrier dynamics, studied are the effects of a newly-developed InAlN electron blocking layer and a p-InGaN:Mg layer on electron blocking and hole transport through multiple-quantum well active region. Also, a new technique of direct surface patterning is demonstrated using three-beam interference laser ablation for efficient photon management.

Original language	English
Pages (from-to)	109-116
Number of pages	8
Journal	ECS Transactions
Volume	61
Issue number	4
DOIs	https://doi.org/10.1149/06104.0109ecst
State	Published - 2014
Event	Symposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting - Orlando, United States Duration: 2014.05.11 → 2014.05.15

Quacquarelli Symonds(QS) Subject Topics

Engineering & Technology

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10.1149/06104.0109ecst

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Ryou, J. H., Kim, J., Choi, S., Kim, H. J., Lochner, Z., Ji, M. H., Satter, M. M., Detchprohm, T., Yoder, P. D., Dupuis, R. D., Asadirad, M., Liu, J. P., Kim, J. S., Fischere, A. M., Juday, R., Ponce, F. A., Kwon, M. K., Yuan, D., Guo, R., & Das, S. (2014). Carrier dynamics and photon management for improvement in quantum efficiencies of GaN-based visible light-emitting diodes. ECS Transactions, 61(4), 109-116. https://doi.org/10.1149/06104.0109ecst

@article{aac555ed87e74c9c8f9cfea7cea2f32c,

title = "Carrier dynamics and photon management for improvement in quantum efficiencies of GaN-based visible light-emitting diodes",

abstract = "Data and analysis are presented employing several new methods to address carrier dynamics and photon management issues in order to improve internal quantum efficiency and light-extraction efficiency of GaN-based light-emitting diodes. For the carrier dynamics, studied are the effects of a newly-developed InAlN electron blocking layer and a p-InGaN:Mg layer on electron blocking and hole transport through multiple-quantum well active region. Also, a new technique of direct surface patterning is demonstrated using three-beam interference laser ablation for efficient photon management.",

author = "Ryou, \{J. H.\} and J. Kim and S. Choi and Kim, \{H. J.\} and Z. Lochner and Ji, \{M. H.\} and Satter, \{Md M.\} and T. Detchprohm and Yoder, \{P. D.\} and Dupuis, \{R. D.\} and M. Asadirad and Liu, \{J. P.\} and Kim, \{J. S.\} and Fischere, \{A. M.\} and R. Juday and Ponce, \{F. A.\} and Kwon, \{M. K.\} and D. Yuan and R. Guo and S. Das",

note = "Publisher Copyright: {\textcopyright} 2014 by The Electrochemical Society. All rights reserved.; Symposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting ; Conference date: 11-05-2014 Through 15-05-2014",

year = "2014",

doi = "10.1149/06104.0109ecst",

language = "English",

volume = "61",

pages = "109--116",

journal = "ECS Transactions",

issn = "1938-5862",

number = "4",

}

Ryou, JH, Kim, J, Choi, S, Kim, HJ, Lochner, Z, Ji, MH, Satter, MM, Detchprohm, T, Yoder, PD, Dupuis, RD, Asadirad, M, Liu, JP, Kim, JS, Fischere, AM, Juday, R, Ponce, FA, Kwon, MK, Yuan, D, Guo, R & Das, S 2014, 'Carrier dynamics and photon management for improvement in quantum efficiencies of GaN-based visible light-emitting diodes', ECS Transactions, vol. 61, no. 4, pp. 109-116. https://doi.org/10.1149/06104.0109ecst

TY - JOUR

T1 - Carrier dynamics and photon management for improvement in quantum efficiencies of GaN-based visible light-emitting diodes

AU - Ryou, J. H.

AU - Kim, J.

AU - Choi, S.

AU - Kim, H. J.

AU - Lochner, Z.

AU - Ji, M. H.

AU - Satter, Md M.

AU - Detchprohm, T.

AU - Yoder, P. D.

AU - Dupuis, R. D.

AU - Asadirad, M.

AU - Liu, J. P.

AU - Kim, J. S.

AU - Fischere, A. M.

AU - Juday, R.

AU - Ponce, F. A.

AU - Kwon, M. K.

AU - Yuan, D.

AU - Guo, R.

AU - Das, S.

PY - 2014

Y1 - 2014

N2 - Data and analysis are presented employing several new methods to address carrier dynamics and photon management issues in order to improve internal quantum efficiency and light-extraction efficiency of GaN-based light-emitting diodes. For the carrier dynamics, studied are the effects of a newly-developed InAlN electron blocking layer and a p-InGaN:Mg layer on electron blocking and hole transport through multiple-quantum well active region. Also, a new technique of direct surface patterning is demonstrated using three-beam interference laser ablation for efficient photon management.

AB - Data and analysis are presented employing several new methods to address carrier dynamics and photon management issues in order to improve internal quantum efficiency and light-extraction efficiency of GaN-based light-emitting diodes. For the carrier dynamics, studied are the effects of a newly-developed InAlN electron blocking layer and a p-InGaN:Mg layer on electron blocking and hole transport through multiple-quantum well active region. Also, a new technique of direct surface patterning is demonstrated using three-beam interference laser ablation for efficient photon management.

UR - https://www.scopus.com/pages/publications/84925041948

U2 - 10.1149/06104.0109ecst

DO - 10.1149/06104.0109ecst

M3 - Conference article

AN - SCOPUS:84925041948

SN - 1938-5862

VL - 61

SP - 109

EP - 116

JO - ECS Transactions

JF - ECS Transactions

IS - 4

T2 - Symposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting

Y2 - 11 May 2014 through 15 May 2014

ER -

Carrier dynamics and photon management for improvement in quantum efficiencies of GaN-based visible light-emitting diodes

Abstract

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