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Carrier relaxation dynamics of InGaN/GaN dot-in-nanowires

  • University of Michigan, Ann Arbor
  • McGill University

Research output: Contribution to conferenceConference paperpeer-review

Abstract

Carrier relaxation was investigated for InGaN/GaN dot-in-nanowires using femtosecond pump-probe in transmission 400nm pump/white light probe. Though bright emitters, the localization of states contributes to relaxation rates which are faster than expected.

Original languageEnglish
Title of host publication2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781943580422
StatePublished - 2018.08.6
Event2018 Conference on Lasers and Electro-Optics, CLEO 2018 - San Jose, United States
Duration: 2018.05.132018.05.18

Publication series

Name2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings

Conference

Conference2018 Conference on Lasers and Electro-Optics, CLEO 2018
Country/TerritoryUnited States
CitySan Jose
Period18.05.1318.05.18

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