Carrier transport mechanism of low resistance Ti/Al/Au ohmic contacts to AlInN/GaN heterostructures

Seongjun Kim; Jae Hyun Ryou; Russell D. Dupuis; Hyunsoo Kim

doi:10.1063/1.4790384

Carrier transport mechanism of low resistance Ti/Al/Au ohmic contacts to AlInN/GaN heterostructures

Seongjun Kim^*
, Jae Hyun Ryou
, Russell D. Dupuis
, Hyunsoo Kim

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Research output: Contribution to journal › Journal article › peer-review

20 Scopus citations

Abstract

The carrier transport mechanism of a low resistance Ti/Al/Au Ohmic contact to AlInN/GaN heterostructures was investigated. The Ohmic contact produced upon thermal annealing was due to the generation of TiN contact inclusions with a density of 2.8 × 10⁸ cm^-2, i.e., spike mechanism. The sheet resistance of channel layer was found to follow power law, yielding the power index of -1.57. Temperature dependent contact resistance could be understood based on the parallel network model consisting of distributed resistance components of TiN contact inclusion (predominant) and the rest sound region (negligible), giving the barrier height of 0.65 eV and the carrier density of 2.3 × 10¹⁹ cm^-3 at the TiN/GaN interfaces.

Original language	English
Article number	052107
Journal	Applied Physics Letters
Volume	102
Issue number	5
DOIs	https://doi.org/10.1063/1.4790384
State	Published - 2013.02.4

Quacquarelli Symonds(QS) Subject Topics

Physics & Astronomy

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@article{75be2d59433748cb857768e20bbeaa64,

title = "Carrier transport mechanism of low resistance Ti/Al/Au ohmic contacts to AlInN/GaN heterostructures",

abstract = "The carrier transport mechanism of a low resistance Ti/Al/Au Ohmic contact to AlInN/GaN heterostructures was investigated. The Ohmic contact produced upon thermal annealing was due to the generation of TiN contact inclusions with a density of 2.8 × 108 cm-2, i.e., spike mechanism. The sheet resistance of channel layer was found to follow power law, yielding the power index of -1.57. Temperature dependent contact resistance could be understood based on the parallel network model consisting of distributed resistance components of TiN contact inclusion (predominant) and the rest sound region (negligible), giving the barrier height of 0.65 eV and the carrier density of 2.3 × 1019 cm-3 at the TiN/GaN interfaces.",

author = "Seongjun Kim and Ryou, \{Jae Hyun\} and Dupuis, \{Russell D.\} and Hyunsoo Kim",

year = "2013",

month = feb,

day = "4",

doi = "10.1063/1.4790384",

language = "English",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "5",

}

TY - JOUR

T1 - Carrier transport mechanism of low resistance Ti/Al/Au ohmic contacts to AlInN/GaN heterostructures

AU - Kim, Seongjun

AU - Ryou, Jae Hyun

AU - Dupuis, Russell D.

AU - Kim, Hyunsoo

PY - 2013/2/4

Y1 - 2013/2/4

N2 - The carrier transport mechanism of a low resistance Ti/Al/Au Ohmic contact to AlInN/GaN heterostructures was investigated. The Ohmic contact produced upon thermal annealing was due to the generation of TiN contact inclusions with a density of 2.8 × 108 cm-2, i.e., spike mechanism. The sheet resistance of channel layer was found to follow power law, yielding the power index of -1.57. Temperature dependent contact resistance could be understood based on the parallel network model consisting of distributed resistance components of TiN contact inclusion (predominant) and the rest sound region (negligible), giving the barrier height of 0.65 eV and the carrier density of 2.3 × 1019 cm-3 at the TiN/GaN interfaces.

AB - The carrier transport mechanism of a low resistance Ti/Al/Au Ohmic contact to AlInN/GaN heterostructures was investigated. The Ohmic contact produced upon thermal annealing was due to the generation of TiN contact inclusions with a density of 2.8 × 108 cm-2, i.e., spike mechanism. The sheet resistance of channel layer was found to follow power law, yielding the power index of -1.57. Temperature dependent contact resistance could be understood based on the parallel network model consisting of distributed resistance components of TiN contact inclusion (predominant) and the rest sound region (negligible), giving the barrier height of 0.65 eV and the carrier density of 2.3 × 1019 cm-3 at the TiN/GaN interfaces.

UR - https://www.scopus.com/pages/publications/84874075426

U2 - 10.1063/1.4790384

DO - 10.1063/1.4790384

M3 - Journal article

AN - SCOPUS:84874075426

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 052107

ER -

Carrier transport mechanism of low resistance Ti/Al/Au ohmic contacts to AlInN/GaN heterostructures

Abstract

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