Carrier transport mechanism of ohmic contacts to AlGaN/GaN heterostructures analysed by parallel network model

S. Kim; C. J. Choi; H. Kim

doi:10.1049/el.2013.0463

Carrier transport mechanism of ohmic contacts to AlGaN/GaN heterostructures analysed by parallel network model

S. Kim
, C. J. Choi
, H. Kim

Department of Semiconductor Science and Technology

Jeonbuk National University

Research output: Contribution to journal › Journal article › peer-review

4 Scopus citations

Abstract

The carrier transport mechanism of low resistance Ti/Al/Au ohmic contact to AlGaN/GaN heterostructures was investigated. Based on a parallel network model consisting of the predominant ohmic path (made by TiN-based contact inclusions) and rest region (no interfacial reaction), the formation of ohmic contact was found to be due to tunnelling of carriers through the thin barrier formed at the TiN-based contact inclusion, where the barrier height was 0.45 eV and the carrier density was 9.0 × 10¹⁸ cm^-3.

Original language	English
Pages (from-to)	561-562
Number of pages	2
Journal	Electronics Letters
Volume	49
Issue number	8
DOIs	https://doi.org/10.1049/el.2013.0463
State	Published - 2013.04.11

Quacquarelli Symonds(QS) Subject Topics

Engineering - Electrical & Electronic
Engineering - Petroleum

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10.1049/el.2013.0463

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title = "Carrier transport mechanism of ohmic contacts to AlGaN/GaN heterostructures analysed by parallel network model",

abstract = "The carrier transport mechanism of low resistance Ti/Al/Au ohmic contact to AlGaN/GaN heterostructures was investigated. Based on a parallel network model consisting of the predominant ohmic path (made by TiN-based contact inclusions) and rest region (no interfacial reaction), the formation of ohmic contact was found to be due to tunnelling of carriers through the thin barrier formed at the TiN-based contact inclusion, where the barrier height was 0.45 eV and the carrier density was 9.0 × 1018 cm-3.",

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journal = "Electronics Letters",

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AU - Kim, S.

AU - Choi, C. J.

AU - Kim, H.

PY - 2013/4/11

Y1 - 2013/4/11

N2 - The carrier transport mechanism of low resistance Ti/Al/Au ohmic contact to AlGaN/GaN heterostructures was investigated. Based on a parallel network model consisting of the predominant ohmic path (made by TiN-based contact inclusions) and rest region (no interfacial reaction), the formation of ohmic contact was found to be due to tunnelling of carriers through the thin barrier formed at the TiN-based contact inclusion, where the barrier height was 0.45 eV and the carrier density was 9.0 × 1018 cm-3.

AB - The carrier transport mechanism of low resistance Ti/Al/Au ohmic contact to AlGaN/GaN heterostructures was investigated. Based on a parallel network model consisting of the predominant ohmic path (made by TiN-based contact inclusions) and rest region (no interfacial reaction), the formation of ohmic contact was found to be due to tunnelling of carriers through the thin barrier formed at the TiN-based contact inclusion, where the barrier height was 0.45 eV and the carrier density was 9.0 × 1018 cm-3.

UR - https://www.scopus.com/pages/publications/84886731208

U2 - 10.1049/el.2013.0463

DO - 10.1049/el.2013.0463

M3 - Journal article

AN - SCOPUS:84886731208

SN - 0013-5194

VL - 49

SP - 561

EP - 562

JO - Electronics Letters

JF - Electronics Letters

IS - 8

ER -

Carrier transport mechanism of ohmic contacts to AlGaN/GaN heterostructures analysed by parallel network model

Abstract

Quacquarelli Symonds(QS) Subject Topics

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