CdS-AgGaS2 photocatalytic diodes for hydrogen production from aqueous Na2S/Na2SO3 electrolyte solution under visible light (λ ≥ 420 nm)

Jum Suk Jang; Dong Won Hwang; Jae Sung Lee

doi:10.1016/j.cattod.2006.07.052

CdS-AgGaS₂ photocatalytic diodes for hydrogen production from aqueous Na₂S/Na₂SO₃ electrolyte solution under visible light (λ ≥ 420 nm)

Jum Suk Jang
, Dong Won Hwang
, Jae Sung Lee^*

^*Corresponding author for this work

Environmental Biotechnology

Pohang University of Science and Technology
Samsung

Research output: Contribution to journal › Journal article › peer-review

73 Scopus citations

Abstract

A p-type semiconductor, bulky AgGaS₂, was prepared by the conventional solid state reaction and heat-treated at various temperatures under He and H₂S gas flow to eliminate vacancies or interstitial defects and to improve the crystallinity. A p-n diode, n-CdS/p-AgGaS2 was fabricated by decorating AgGaS₂ surface with nanoparticles of n-type CdS by the hydrothermal treatment. The configuration was confirmed by XRD, UV-vis spectroscopy and TEM. The composite photocatalyst of this new configuration exhibited a high rate of hydrogen production under visible light irradiation (λ ≥ 420 nm) from water containing sulfide and sulfite as hole scavengers. The photocatalytic diode system formed with n- and p-type semiconductors results in efficient charge separation, caused by the rectification of photo-electrons and holes generated upon photo-absorption.

Original language	English
Pages (from-to)	174-181
Number of pages	8
Journal	Catalysis Today
Volume	120
Issue number	2
DOIs	https://doi.org/10.1016/j.cattod.2006.07.052
State	Published - 2007.02.15

Keywords

AgGaS
CdS
Hydrogen production
Photocatalysts
Photocatalytic diode

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10.1016/j.cattod.2006.07.052

Cite this

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title = "CdS-AgGaS2 photocatalytic diodes for hydrogen production from aqueous Na2S/Na2SO3 electrolyte solution under visible light (λ ≥ 420 nm)",

abstract = "A p-type semiconductor, bulky AgGaS2, was prepared by the conventional solid state reaction and heat-treated at various temperatures under He and H2S gas flow to eliminate vacancies or interstitial defects and to improve the crystallinity. A p-n diode, n-CdS/p-AgGaS2 was fabricated by decorating AgGaS2 surface with nanoparticles of n-type CdS by the hydrothermal treatment. The configuration was confirmed by XRD, UV-vis spectroscopy and TEM. The composite photocatalyst of this new configuration exhibited a high rate of hydrogen production under visible light irradiation (λ ≥ 420 nm) from water containing sulfide and sulfite as hole scavengers. The photocatalytic diode system formed with n- and p-type semiconductors results in efficient charge separation, caused by the rectification of photo-electrons and holes generated upon photo-absorption.",

keywords = "AgGaS, CdS, Hydrogen production, Photocatalysts, Photocatalytic diode",

author = "Jang, \{Jum Suk\} and Hwang, \{Dong Won\} and Lee, \{Jae Sung\}",

year = "2007",

month = feb,

day = "15",

doi = "10.1016/j.cattod.2006.07.052",

language = "English",

volume = "120",

pages = "174--181",

journal = "Catalysis Today",

issn = "0920-5861",

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TY - JOUR

T1 - CdS-AgGaS2 photocatalytic diodes for hydrogen production from aqueous Na2S/Na2SO3 electrolyte solution under visible light (λ ≥ 420 nm)

AU - Jang, Jum Suk

AU - Hwang, Dong Won

AU - Lee, Jae Sung

PY - 2007/2/15

Y1 - 2007/2/15

N2 - A p-type semiconductor, bulky AgGaS2, was prepared by the conventional solid state reaction and heat-treated at various temperatures under He and H2S gas flow to eliminate vacancies or interstitial defects and to improve the crystallinity. A p-n diode, n-CdS/p-AgGaS2 was fabricated by decorating AgGaS2 surface with nanoparticles of n-type CdS by the hydrothermal treatment. The configuration was confirmed by XRD, UV-vis spectroscopy and TEM. The composite photocatalyst of this new configuration exhibited a high rate of hydrogen production under visible light irradiation (λ ≥ 420 nm) from water containing sulfide and sulfite as hole scavengers. The photocatalytic diode system formed with n- and p-type semiconductors results in efficient charge separation, caused by the rectification of photo-electrons and holes generated upon photo-absorption.

AB - A p-type semiconductor, bulky AgGaS2, was prepared by the conventional solid state reaction and heat-treated at various temperatures under He and H2S gas flow to eliminate vacancies or interstitial defects and to improve the crystallinity. A p-n diode, n-CdS/p-AgGaS2 was fabricated by decorating AgGaS2 surface with nanoparticles of n-type CdS by the hydrothermal treatment. The configuration was confirmed by XRD, UV-vis spectroscopy and TEM. The composite photocatalyst of this new configuration exhibited a high rate of hydrogen production under visible light irradiation (λ ≥ 420 nm) from water containing sulfide and sulfite as hole scavengers. The photocatalytic diode system formed with n- and p-type semiconductors results in efficient charge separation, caused by the rectification of photo-electrons and holes generated upon photo-absorption.

KW - AgGaS

KW - CdS

KW - Hydrogen production

KW - Photocatalysts

KW - Photocatalytic diode

UR - https://www.scopus.com/pages/publications/33845309642

U2 - 10.1016/j.cattod.2006.07.052

DO - 10.1016/j.cattod.2006.07.052

M3 - Journal article

AN - SCOPUS:33845309642

SN - 0920-5861

VL - 120

SP - 174

EP - 181

JO - Catalysis Today

JF - Catalysis Today

IS - 2

ER -

CdS-AgGaS₂ photocatalytic diodes for hydrogen production from aqueous Na₂S/Na₂SO₃ electrolyte solution under visible light (λ ≥ 420 nm)

Abstract

Keywords

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