@inproceedings{35c492bedb2844d9bdd6db0db8d6d032,
title = "Change in electrical characteristics of gallium phosphide nanowire transistors under different environments",
abstract = "Gallium phosphide (GaP) nanowire transistors were fabricated in a back gated structure and their electrical characteristics were measured systematically in air and vacuum. Typically the transistors turn on at -7 to -5V in ambient air. However, in vacuum, a large Vth shift about ∼10V toward the negative gate bias was observed. Exposure to air for 48 hours shifts the Vth back to the original Vth in air, which implies a reversible Vth shift. We believe that the shift of Vth is associated with charge transfer between physically adsorbed O or OH species and the surface of GaP nanowire. The device operation can be explained by conventional n-channel depletion type MOSFET operation.",
keywords = "Environment effects, Gallium phosphide, Nano electronics, Nanowire transistors",
author = "Donghun Kang and Wanjun Park and Byungkye Kim and Jujin Kim and Cheoljin Lee",
year = "2004",
language = "English",
isbn = "0780385365",
series = "2004 4th IEEE Conference on Nanotechnology",
pages = "370--372",
booktitle = "2004 4th IEEE Conference on Nanotechnology",
note = "2004 4th IEEE Conference on Nanotechnology ; Conference date: 16-08-2004 Through 19-08-2004",
}