Change in the electrical characteristics of single-walled carbon nanotube networks under photoresist treatment

The electrical properties of a single-walled carbon nanotube network were investigated after photoresist treatment with the pristine device. Atomic force microscopy found that the diameters of the single-walled carbon nanotubes were increased after photoresist treatment and that the photoresist could not be completely removed from nanotube surfaces by using a simple cleaning process with an organic solvent. Although the presence of a residual photoresist had no noticeable effects on the Raman spectrum of single-walled carbon nanotubes in our devices, the charge carrier mobilities and the on/off ratios of the single-walled carbon nanotube devices were lowered due to the photoresist treatment, and the gate-hysteresis behavior in the devices that had undergone photoresist treatment was found to be different from that of pristine devices.