Characteristic of InGaN/GaN laser diode grown by a multi-wafer MOCVD system

Y. Park; B. J. Kim; J. W. Lee; O. H. Nam; C. Sone; H. Park; Eunsoon Oh; H. Shin; S. Chae; J. Cho; Ig Hyeon Kim; J. S. Khim; S. Cho; T. I. Kim

doi:10.1557/s1092578300000570

Characteristic of InGaN/GaN laser diode grown by a multi-wafer MOCVD system

Y. Park^*
, B. J. Kim
, J. W. Lee
, O. H. Nam
, C. Sone
, H. Park
, Eunsoon Oh
, H. Shin
, S. Chae
, J. Cho
, Ig Hyeon Kim
, J. S. Khim
, S. Cho
, T. I. Kim

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Samsung

Research output: Contribution to journal › Journal article › peer-review

1 Scopus citations

Abstract

InGaN/GaN multi-quantum well (MQW) laser diodes (LDs) were grown on c-plane sapphire substrates using a multi-wafer MOCVD system. The threshold current for pulsed lasing was 1.6 A for a gain-guided laser diode with a stripe of 10 × 800 μm². The threshold current density was 20.3 kA cm ^-2 and the threshold voltage was 16.5 V. The optical power ratio of transverse electric mode to transverse magnetic mode was found to be greater than 50. The characteristic temperature measured from the plot of threshold current versus measurement temperature was between 130 and 150K.

Original language	English
Journal	MRS Internet Journal of Nitride Semiconductor Research
Volume	4
DOIs	https://doi.org/10.1557/s1092578300000570
State	Published - 1999

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@article{75a801c425ff436d915415d1420c880f,

title = "Characteristic of InGaN/GaN laser diode grown by a multi-wafer MOCVD system",

abstract = "InGaN/GaN multi-quantum well (MQW) laser diodes (LDs) were grown on c-plane sapphire substrates using a multi-wafer MOCVD system. The threshold current for pulsed lasing was 1.6 A for a gain-guided laser diode with a stripe of 10 × 800 μm2. The threshold current density was 20.3 kA cm -2 and the threshold voltage was 16.5 V. The optical power ratio of transverse electric mode to transverse magnetic mode was found to be greater than 50. The characteristic temperature measured from the plot of threshold current versus measurement temperature was between 130 and 150K.",

author = "Y. Park and Kim, \{B. J.\} and Lee, \{J. W.\} and Nam, \{O. H.\} and C. Sone and H. Park and Eunsoon Oh and H. Shin and S. Chae and J. Cho and Kim, \{Ig Hyeon\} and Khim, \{J. S.\} and S. Cho and Kim, \{T. I.\}",

year = "1999",

doi = "10.1557/s1092578300000570",

language = "English",

volume = "4",

journal = "MRS Internet Journal of Nitride Semiconductor Research",

issn = "1092-5783",

}

TY - JOUR

T1 - Characteristic of InGaN/GaN laser diode grown by a multi-wafer MOCVD system

AU - Park, Y.

AU - Kim, B. J.

AU - Lee, J. W.

AU - Nam, O. H.

AU - Sone, C.

AU - Park, H.

AU - Oh, Eunsoon

AU - Shin, H.

AU - Chae, S.

AU - Cho, J.

AU - Kim, Ig Hyeon

AU - Khim, J. S.

AU - Cho, S.

AU - Kim, T. I.

PY - 1999

Y1 - 1999

N2 - InGaN/GaN multi-quantum well (MQW) laser diodes (LDs) were grown on c-plane sapphire substrates using a multi-wafer MOCVD system. The threshold current for pulsed lasing was 1.6 A for a gain-guided laser diode with a stripe of 10 × 800 μm2. The threshold current density was 20.3 kA cm -2 and the threshold voltage was 16.5 V. The optical power ratio of transverse electric mode to transverse magnetic mode was found to be greater than 50. The characteristic temperature measured from the plot of threshold current versus measurement temperature was between 130 and 150K.

AB - InGaN/GaN multi-quantum well (MQW) laser diodes (LDs) were grown on c-plane sapphire substrates using a multi-wafer MOCVD system. The threshold current for pulsed lasing was 1.6 A for a gain-guided laser diode with a stripe of 10 × 800 μm2. The threshold current density was 20.3 kA cm -2 and the threshold voltage was 16.5 V. The optical power ratio of transverse electric mode to transverse magnetic mode was found to be greater than 50. The characteristic temperature measured from the plot of threshold current versus measurement temperature was between 130 and 150K.

UR - https://www.scopus.com/pages/publications/0342278777

U2 - 10.1557/s1092578300000570

DO - 10.1557/s1092578300000570

M3 - Journal article

AN - SCOPUS:0342278777

SN - 1092-5783

VL - 4

JO - MRS Internet Journal of Nitride Semiconductor Research

JF - MRS Internet Journal of Nitride Semiconductor Research

ER -

Characteristic of InGaN/GaN laser diode grown by a multi-wafer MOCVD system

Abstract

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