Characteristics of 8-junction Al single-electron trap

Hye Mi So; Jinhee Kim; Jong Wan Park; Kyung Hwa Yoo; Jeong O. Lee; Ju Jin Kim

Characteristics of 8-junction Al single-electron trap

Hye Mi So^*
, Jinhee Kim
, Jong Wan Park
, Kyung Hwa Yoo
, Jeong O. Lee
, Ju Jin Kim

^*Corresponding author for this work

Department of Physics

Jeonbuk National University
Korea Research Institute of Standards and Science

Research output: Contribution to journal › Journal article › peer-review

Abstract

Single-electron trap, consisting of 8 Al/Al₂O₃/Al tunnel junctions, was fabricated and characterized in normal and superconducting states of Al. The output current of the single-electron transistor exhibited plateaus and hysteresis with varying trap voltage, which was attributed to trapping and releasing of electrons. The activation energy obtained from the voltage interval between current plateaus was consistent with the estimated value.

Original language	English
Pages (from-to)	347-350
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	37
Issue number	3
State	Published - 2000.09

Quacquarelli Symonds(QS) Subject Topics

Physics & Astronomy

Cite this

@article{b0208edd96b64f908e6d9365a85c4e50,

title = "Characteristics of 8-junction Al single-electron trap",

abstract = "Single-electron trap, consisting of 8 Al/Al2O3/Al tunnel junctions, was fabricated and characterized in normal and superconducting states of Al. The output current of the single-electron transistor exhibited plateaus and hysteresis with varying trap voltage, which was attributed to trapping and releasing of electrons. The activation energy obtained from the voltage interval between current plateaus was consistent with the estimated value.",

author = "So, \{Hye Mi\} and Jinhee Kim and Park, \{Jong Wan\} and Yoo, \{Kyung Hwa\} and Lee, \{Jeong O.\} and Kim, \{Ju Jin\}",

year = "2000",

month = sep,

language = "English",

volume = "37",

pages = "347--350",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

number = "3",

}

TY - JOUR

T1 - Characteristics of 8-junction Al single-electron trap

AU - So, Hye Mi

AU - Kim, Jinhee

AU - Park, Jong Wan

AU - Yoo, Kyung Hwa

AU - Lee, Jeong O.

AU - Kim, Ju Jin

PY - 2000/9

Y1 - 2000/9

N2 - Single-electron trap, consisting of 8 Al/Al2O3/Al tunnel junctions, was fabricated and characterized in normal and superconducting states of Al. The output current of the single-electron transistor exhibited plateaus and hysteresis with varying trap voltage, which was attributed to trapping and releasing of electrons. The activation energy obtained from the voltage interval between current plateaus was consistent with the estimated value.

AB - Single-electron trap, consisting of 8 Al/Al2O3/Al tunnel junctions, was fabricated and characterized in normal and superconducting states of Al. The output current of the single-electron transistor exhibited plateaus and hysteresis with varying trap voltage, which was attributed to trapping and releasing of electrons. The activation energy obtained from the voltage interval between current plateaus was consistent with the estimated value.

UR - https://www.scopus.com/pages/publications/0034258240

M3 - Journal article

AN - SCOPUS:0034258240

SN - 0374-4884

VL - 37

SP - 347

EP - 350

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 3

ER -

Characteristics of 8-junction Al single-electron trap

Abstract

Quacquarelli Symonds(QS) Subject Topics

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