Characteristics of CdTe/ZnTe quantum dots grown on GaAs (100) and Si (100) substrates

H. S. Lee; H. L. Park; T. W. Kim

doi:10.1063/1.2201865

Characteristics of CdTe/ZnTe quantum dots grown on GaAs (100) and Si (100) substrates

H. S. Lee
, H. L. Park^*
, T. W. Kim

^*Corresponding author for this work

Department of Physics

Yonsei University
Hanyang University

Research output: Contribution to journal › Journal article › peer-review

4 Scopus citations

Abstract

We have studied the growth of self-assembled CdTeZnTe quantum dots (QDs) on both GaAs (100) and Si (100) substrates. The growth of self-assembled CdTeZnTe QDs on substrates shows many difficulties which are not completely solved yet. In contrast, on GaAs substrates, good crystalline quality is obtained. The results of the atomic force microscopy images showed that CdTeZnTe QDs were formed on GaAs (100) and Si (100) substrates. The activation energy of the electrons confined in the CdTeZnTe QDs grown on GaAs (100) and Si (100) substrates was obtained from the temperature-dependent photoluminescence spectra.

Original language	English
Article number	181914
Journal	Applied Physics Letters
Volume	88
Issue number	18
DOIs	https://doi.org/10.1063/1.2201865
State	Published - 2006.05.1

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title = "Characteristics of CdTe/ZnTe quantum dots grown on GaAs (100) and Si (100) substrates",

abstract = "We have studied the growth of self-assembled CdTeZnTe quantum dots (QDs) on both GaAs (100) and Si (100) substrates. The growth of self-assembled CdTeZnTe QDs on substrates shows many difficulties which are not completely solved yet. In contrast, on GaAs substrates, good crystalline quality is obtained. The results of the atomic force microscopy images showed that CdTeZnTe QDs were formed on GaAs (100) and Si (100) substrates. The activation energy of the electrons confined in the CdTeZnTe QDs grown on GaAs (100) and Si (100) substrates was obtained from the temperature-dependent photoluminescence spectra.",

author = "Lee, \{H. S.\} and Park, \{H. L.\} and Kim, \{T. W.\}",

year = "2006",

month = may,

day = "1",

doi = "10.1063/1.2201865",

language = "English",

volume = "88",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "18",

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TY - JOUR

T1 - Characteristics of CdTe/ZnTe quantum dots grown on GaAs (100) and Si (100) substrates

AU - Lee, H. S.

AU - Park, H. L.

AU - Kim, T. W.

PY - 2006/5/1

Y1 - 2006/5/1

N2 - We have studied the growth of self-assembled CdTeZnTe quantum dots (QDs) on both GaAs (100) and Si (100) substrates. The growth of self-assembled CdTeZnTe QDs on substrates shows many difficulties which are not completely solved yet. In contrast, on GaAs substrates, good crystalline quality is obtained. The results of the atomic force microscopy images showed that CdTeZnTe QDs were formed on GaAs (100) and Si (100) substrates. The activation energy of the electrons confined in the CdTeZnTe QDs grown on GaAs (100) and Si (100) substrates was obtained from the temperature-dependent photoluminescence spectra.

AB - We have studied the growth of self-assembled CdTeZnTe quantum dots (QDs) on both GaAs (100) and Si (100) substrates. The growth of self-assembled CdTeZnTe QDs on substrates shows many difficulties which are not completely solved yet. In contrast, on GaAs substrates, good crystalline quality is obtained. The results of the atomic force microscopy images showed that CdTeZnTe QDs were formed on GaAs (100) and Si (100) substrates. The activation energy of the electrons confined in the CdTeZnTe QDs grown on GaAs (100) and Si (100) substrates was obtained from the temperature-dependent photoluminescence spectra.

UR - https://www.scopus.com/pages/publications/33646510136

U2 - 10.1063/1.2201865

DO - 10.1063/1.2201865

M3 - Journal article

AN - SCOPUS:33646510136

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 181914

ER -

Characteristics of CdTe/ZnTe quantum dots grown on GaAs (100) and Si (100) substrates

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