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Characteristics of dotlike green satellite emission in GaInN light emitting diodes

  • An Mao*
  • , Jaehee Cho
  • , Qi Dai
  • , E. Fred Schubert
  • , Joong Kon Son
  • , Yongjo Park
  • *Corresponding author for this work
  • Rensselaer Polytechnic Institute
  • Samsung

Research output: Contribution to journalJournal articlepeer-review

Abstract

An unwanted green satellite emission in blue GaInN light emitting diodes (LEDs) has been investigated under various electrical bias conditions and temperatures. The dot-shaped green satellite emission appears only under electrically biased conditions of the LED (but not under photoluminescence excitation) and contributes directly to a high subthreshold leakage current of the LED. A weak temperature dependency of the green satellite emission intensity is observed indicating that tunneling-assisted radiative recombination involving Mg acceptors is the origin of the green emission.

Original languageEnglish
Article number023503
JournalApplied Physics Letters
Volume98
Issue number2
DOIs
StatePublished - 2011.01.10

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