Characteristics of metal contact to GaS films and photodetector applications

Ju Won Kim; Dong Hyun Seo; Hagyoul Bae; Joo Hyung Park; Tae Wan Kim

doi:10.1007/s40042-024-01157-w

Characteristics of metal contact to GaS films and photodetector applications

Ju Won Kim
, Dong Hyun Seo
, Hagyoul Bae
, Joo Hyung Park
, Tae Wan Kim^*

^*Corresponding author for this work

Division of Electronic Engineering

University of Seoul
Korea Institute of Energy Research

Research output: Contribution to journal › Journal article › peer-review

3 Scopus citations

Abstract

Group-III monochalcogenides, particularly gallium sulfide (GaS), have garnered attention for visible–UV range optoelectronic applications owing to their wide bandgap, which can reach approximately 3 eV. The interplay between group-III monochalcogenides and metal electrodes needs to be understood to optimize the device performance. In this study, we explored the Schottky barrier height between GaS deposited through atomic layer deposition and commonly employed Ti/Au electrodes through low-temperature current–voltage measurements. The GaS photodetector exhibited p-type transport characteristics with a mobility of 7.71 × 10^–1 cm² V⁻¹ s⁻¹ and a photoresponsivity of 547 A W⁻¹.

Original language	English
Pages (from-to)	572-577
Number of pages	6
Journal	Journal of the Korean Physical Society
Volume	85
Issue number	7
DOIs	https://doi.org/10.1007/s40042-024-01157-w
State	Published - 2024.10

Keywords

Chalcogenide
Gallium sulfide
Mobility
Photoresponsivity
Schottky barrier height

Quacquarelli Symonds(QS) Subject Topics

Physics & Astronomy

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10.1007/s40042-024-01157-w

Cite this

@article{ccd9cad1f5824116aa9d433a300663be,

title = "Characteristics of metal contact to GaS films and photodetector applications",

abstract = "Group-III monochalcogenides, particularly gallium sulfide (GaS), have garnered attention for visible{\textendash}UV range optoelectronic applications owing to their wide bandgap, which can reach approximately 3 eV. The interplay between group-III monochalcogenides and metal electrodes needs to be understood to optimize the device performance. In this study, we explored the Schottky barrier height between GaS deposited through atomic layer deposition and commonly employed Ti/Au electrodes through low-temperature current{\textendash}voltage measurements. The GaS photodetector exhibited p-type transport characteristics with a mobility of 7.71 {\texttimes} 10{\textendash}1 cm2 V−1 s−1 and a photoresponsivity of 547 A W−1.",

keywords = "Chalcogenide, Gallium sulfide, Mobility, Photoresponsivity, Schottky barrier height",

author = "Kim, \{Ju Won\} and Seo, \{Dong Hyun\} and Hagyoul Bae and Park, \{Joo Hyung\} and Kim, \{Tae Wan\}",

note = "Publisher Copyright: {\textcopyright} The Korean Physical Society 2024.",

year = "2024",

month = oct,

doi = "10.1007/s40042-024-01157-w",

language = "English",

volume = "85",

pages = "572--577",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

number = "7",

}

TY - JOUR

T1 - Characteristics of metal contact to GaS films and photodetector applications

AU - Kim, Ju Won

AU - Seo, Dong Hyun

AU - Bae, Hagyoul

AU - Park, Joo Hyung

AU - Kim, Tae Wan

N1 - Publisher Copyright: © The Korean Physical Society 2024.

PY - 2024/10

Y1 - 2024/10

N2 - Group-III monochalcogenides, particularly gallium sulfide (GaS), have garnered attention for visible–UV range optoelectronic applications owing to their wide bandgap, which can reach approximately 3 eV. The interplay between group-III monochalcogenides and metal electrodes needs to be understood to optimize the device performance. In this study, we explored the Schottky barrier height between GaS deposited through atomic layer deposition and commonly employed Ti/Au electrodes through low-temperature current–voltage measurements. The GaS photodetector exhibited p-type transport characteristics with a mobility of 7.71 × 10–1 cm2 V−1 s−1 and a photoresponsivity of 547 A W−1.

AB - Group-III monochalcogenides, particularly gallium sulfide (GaS), have garnered attention for visible–UV range optoelectronic applications owing to their wide bandgap, which can reach approximately 3 eV. The interplay between group-III monochalcogenides and metal electrodes needs to be understood to optimize the device performance. In this study, we explored the Schottky barrier height between GaS deposited through atomic layer deposition and commonly employed Ti/Au electrodes through low-temperature current–voltage measurements. The GaS photodetector exhibited p-type transport characteristics with a mobility of 7.71 × 10–1 cm2 V−1 s−1 and a photoresponsivity of 547 A W−1.

KW - Chalcogenide

KW - Gallium sulfide

KW - Mobility

KW - Photoresponsivity

KW - Schottky barrier height

UR - https://www.scopus.com/pages/publications/85201828474

U2 - 10.1007/s40042-024-01157-w

DO - 10.1007/s40042-024-01157-w

M3 - Journal article

AN - SCOPUS:85201828474

SN - 0374-4884

VL - 85

SP - 572

EP - 577

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 7

ER -

Characteristics of metal contact to GaS films and photodetector applications

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

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