Characteristics of metal-oxide-semiconductor (MOS) device with Er metal gate on SiO2 film

Chel Jong Choi; Ha Yong Yang; Hyo Bong Hong; Jin Gyu Kim; Sung Yong Chang; Jouhahn Lee

doi:10.1016/j.microrel.2008.12.014

Characteristics of metal-oxide-semiconductor (MOS) device with Er metal gate on SiO₂ film

Chel Jong Choi
, Ha Yong Yang
, Hyo Bong Hong
, Jin Gyu Kim
, Sung Yong Chang
, Jouhahn Lee^*

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Research output: Contribution to journal › Journal article › peer-review

2 Scopus citations

Abstract

We have investigated the structural and electrical properties of metal-oxide-semiconductor (MOS) devices with Er metal gate on SiO₂ film. Rapid thermal annealing (RTA) process leads to the formation of a high-k Er-silicate gate dielectric. The in situ high-voltage electron microscopy (HVEM) results show that thermally driven Er diffusion is responsible for the decrease in equivalent oxide thickness (EOT) with an increase in annealing temperature. The effective work function (Φ_m,eff) of Er metal gate, extracted from the relations of EOT versus flat-band voltage (V_FB), is calculated to be ∼2.86 eV.

Original language	English
Pages (from-to)	463-465
Number of pages	3
Journal	Microelectronics Reliability
Volume	49
Issue number	4
DOIs	https://doi.org/10.1016/j.microrel.2008.12.014
State	Published - 2009.04

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Electrical & Electronic
Engineering - Petroleum
Physics & Astronomy

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10.1016/j.microrel.2008.12.014

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@article{20c982c57ad44b738d1a087d4152970f,

title = "Characteristics of metal-oxide-semiconductor (MOS) device with Er metal gate on SiO2 film",

abstract = "We have investigated the structural and electrical properties of metal-oxide-semiconductor (MOS) devices with Er metal gate on SiO2 film. Rapid thermal annealing (RTA) process leads to the formation of a high-k Er-silicate gate dielectric. The in situ high-voltage electron microscopy (HVEM) results show that thermally driven Er diffusion is responsible for the decrease in equivalent oxide thickness (EOT) with an increase in annealing temperature. The effective work function (Φm,eff) of Er metal gate, extracted from the relations of EOT versus flat-band voltage (VFB), is calculated to be ∼2.86 eV.",

author = "Choi, \{Chel Jong\} and Yang, \{Ha Yong\} and Hong, \{Hyo Bong\} and Kim, \{Jin Gyu\} and Chang, \{Sung Yong\} and Jouhahn Lee",

year = "2009",

month = apr,

doi = "10.1016/j.microrel.2008.12.014",

language = "English",

volume = "49",

pages = "463--465",

journal = "Microelectronics Reliability",

issn = "0026-2714",

number = "4",

}

TY - JOUR

T1 - Characteristics of metal-oxide-semiconductor (MOS) device with Er metal gate on SiO2 film

AU - Choi, Chel Jong

AU - Yang, Ha Yong

AU - Hong, Hyo Bong

AU - Kim, Jin Gyu

AU - Chang, Sung Yong

AU - Lee, Jouhahn

PY - 2009/4

Y1 - 2009/4

N2 - We have investigated the structural and electrical properties of metal-oxide-semiconductor (MOS) devices with Er metal gate on SiO2 film. Rapid thermal annealing (RTA) process leads to the formation of a high-k Er-silicate gate dielectric. The in situ high-voltage electron microscopy (HVEM) results show that thermally driven Er diffusion is responsible for the decrease in equivalent oxide thickness (EOT) with an increase in annealing temperature. The effective work function (Φm,eff) of Er metal gate, extracted from the relations of EOT versus flat-band voltage (VFB), is calculated to be ∼2.86 eV.

AB - We have investigated the structural and electrical properties of metal-oxide-semiconductor (MOS) devices with Er metal gate on SiO2 film. Rapid thermal annealing (RTA) process leads to the formation of a high-k Er-silicate gate dielectric. The in situ high-voltage electron microscopy (HVEM) results show that thermally driven Er diffusion is responsible for the decrease in equivalent oxide thickness (EOT) with an increase in annealing temperature. The effective work function (Φm,eff) of Er metal gate, extracted from the relations of EOT versus flat-band voltage (VFB), is calculated to be ∼2.86 eV.

UR - https://www.scopus.com/pages/publications/63649119247

U2 - 10.1016/j.microrel.2008.12.014

DO - 10.1016/j.microrel.2008.12.014

M3 - Journal article

AN - SCOPUS:63649119247

SN - 0026-2714

VL - 49

SP - 463

EP - 465

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 4

ER -

Characteristics of metal-oxide-semiconductor (MOS) device with Er metal gate on SiO₂ film

Abstract

Quacquarelli Symonds(QS) Subject Topics

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