Characteristics of poly-SiGe thin films prepared at low temperatures

Jung Hui Lee; Byoung Jung Choi; Sung Chae Yang

doi:10.3938/jkps.51.1134

Characteristics of poly-SiGe thin films prepared at low temperatures

Jung Hui Lee
, Byoung Jung Choi
, Sung Chae Yang^*

^*Corresponding author for this work

Department of Electrical Engineering

Jeonbuk National University

Research output: Contribution to journal › Journal article › peer-review

2 Scopus citations

Abstract

Thin films of polycrystalline silicon germanium (Si_1-xGe _x) were prepared by using an ion-beam evaporation (IBE) method with Si-Ge multi-phase targets at low temperature. After irradiation of the targets by a pulsed light ion beam with a peak energy of 1 MV, 450 nm thick films were deposited on Si single crystal and quartz glass substrates. From Raman spectroscopy analysis, we determined that the thin films consisted of single phase Si_1-xGe_x, whose composition was close to those of the targets.

Original language	English
Pages (from-to)	1134-1137
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	51
Issue number	3
DOIs	https://doi.org/10.3938/jkps.51.1134
State	Published - 2007.09

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Low temperature
Poly-sige thin films
Pulsed ion-beam evaporation (IBE) method

Quacquarelli Symonds(QS) Subject Topics

Physics & Astronomy

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10.3938/jkps.51.1134

Cite this

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title = "Characteristics of poly-SiGe thin films prepared at low temperatures",

abstract = "Thin films of polycrystalline silicon germanium (Si1-xGe x) were prepared by using an ion-beam evaporation (IBE) method with Si-Ge multi-phase targets at low temperature. After irradiation of the targets by a pulsed light ion beam with a peak energy of 1 MV, 450 nm thick films were deposited on Si single crystal and quartz glass substrates. From Raman spectroscopy analysis, we determined that the thin films consisted of single phase Si1-xGex, whose composition was close to those of the targets.",

keywords = "Low temperature, Poly-sige thin films, Pulsed ion-beam evaporation (IBE) method",

author = "Lee, \{Jung Hui\} and Choi, \{Byoung Jung\} and Yang, \{Sung Chae\}",

year = "2007",

month = sep,

doi = "10.3938/jkps.51.1134",

language = "English",

volume = "51",

pages = "1134--1137",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

number = "3",

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TY - JOUR

T1 - Characteristics of poly-SiGe thin films prepared at low temperatures

AU - Lee, Jung Hui

AU - Choi, Byoung Jung

AU - Yang, Sung Chae

PY - 2007/9

Y1 - 2007/9

N2 - Thin films of polycrystalline silicon germanium (Si1-xGe x) were prepared by using an ion-beam evaporation (IBE) method with Si-Ge multi-phase targets at low temperature. After irradiation of the targets by a pulsed light ion beam with a peak energy of 1 MV, 450 nm thick films were deposited on Si single crystal and quartz glass substrates. From Raman spectroscopy analysis, we determined that the thin films consisted of single phase Si1-xGex, whose composition was close to those of the targets.

AB - Thin films of polycrystalline silicon germanium (Si1-xGe x) were prepared by using an ion-beam evaporation (IBE) method with Si-Ge multi-phase targets at low temperature. After irradiation of the targets by a pulsed light ion beam with a peak energy of 1 MV, 450 nm thick films were deposited on Si single crystal and quartz glass substrates. From Raman spectroscopy analysis, we determined that the thin films consisted of single phase Si1-xGex, whose composition was close to those of the targets.

KW - Low temperature

KW - Poly-sige thin films

KW - Pulsed ion-beam evaporation (IBE) method

UR - https://www.scopus.com/pages/publications/34948833674

U2 - 10.3938/jkps.51.1134

DO - 10.3938/jkps.51.1134

M3 - Journal article

AN - SCOPUS:34948833674

SN - 0374-4884

VL - 51

SP - 1134

EP - 1137

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 3

ER -

Characteristics of poly-SiGe thin films prepared at low temperatures

Abstract

UN SDGs

Keywords

Quacquarelli Symonds(QS) Subject Topics

Access to Document

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