Characterization of asymmetrical negative bias stress effect on the density-of-states and parasitic resistances in a-IGZO thin-film transistors

Chunhyung Jo; Hagyoul Bae; Sungwoo Jun; Hyunjun Choi; Seonwook Hwang; Dae Hwan Kim; Dong Myong Kim; Byung Du Ahn; Je Hun Lee; Junho Song

doi:10.1002/j.2168-0159.2013.tb06409.x

Characterization of asymmetrical negative bias stress effect on the density-of-states and parasitic resistances in a-IGZO thin-film transistors

Chunhyung Jo
, Hagyoul Bae
, Sungwoo Jun
, Hyunjun Choi
, Seonwook Hwang
, Dae Hwan Kim
, Dong Myong Kim
, Byung Du Ahn
, Je Hun Lee
, Junho Song

Division of Electronic Engineering

Kookmin University
Samsung

Research output: Contribution to journal › Journal article › peer-review

1 Scopus citations

Abstract

The dominant mechanism of the negative bias stress (NBS)-induced instability is investigated not to be a change in the subgap DOS but a change in the parasitic resistance caused by the reduced Schottky barrier of the metal contacts. This was verified by the extracted source/drain resistance and TCAD simulation.

Original language	English
Pages (from-to)	1070-1073
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	44
Issue number	1
DOIs	https://doi.org/10.1002/j.2168-0159.2013.tb06409.x
State	Published - 2013.06

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10.1002/j.2168-0159.2013.tb06409.x

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Jo, C., Bae, H., Jun, S., Choi, H., Hwang, S., Kim, D. H., Kim, D. M., Ahn, B. D., Lee, J. H., & Song, J. (2013). Characterization of asymmetrical negative bias stress effect on the density-of-states and parasitic resistances in a-IGZO thin-film transistors. Digest of Technical Papers - SID International Symposium, 44(1), 1070-1073. https://doi.org/10.1002/j.2168-0159.2013.tb06409.x

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title = "Characterization of asymmetrical negative bias stress effect on the density-of-states and parasitic resistances in a-IGZO thin-film transistors",

abstract = "The dominant mechanism of the negative bias stress (NBS)-induced instability is investigated not to be a change in the subgap DOS but a change in the parasitic resistance caused by the reduced Schottky barrier of the metal contacts. This was verified by the extracted source/drain resistance and TCAD simulation.",

author = "Chunhyung Jo and Hagyoul Bae and Sungwoo Jun and Hyunjun Choi and Seonwook Hwang and Kim, \{Dae Hwan\} and Kim, \{Dong Myong\} and Ahn, \{Byung Du\} and Lee, \{Je Hun\} and Junho Song",

year = "2013",

month = jun,

doi = "10.1002/j.2168-0159.2013.tb06409.x",

language = "English",

volume = "44",

pages = "1070--1073",

journal = "Digest of Technical Papers - SID International Symposium",

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number = "1",

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Jo, C, Bae, H, Jun, S, Choi, H, Hwang, S, Kim, DH, Kim, DM, Ahn, BD, Lee, JH & Song, J 2013, 'Characterization of asymmetrical negative bias stress effect on the density-of-states and parasitic resistances in a-IGZO thin-film transistors', Digest of Technical Papers - SID International Symposium, vol. 44, no. 1, pp. 1070-1073. https://doi.org/10.1002/j.2168-0159.2013.tb06409.x

Characterization of asymmetrical negative bias stress effect on the density-of-states and parasitic resistances in a-IGZO thin-film transistors. / Jo, Chunhyung; Bae, Hagyoul; Jun, Sungwoo et al.
In: Digest of Technical Papers - SID International Symposium, Vol. 44, No. 1, 06.2013, p. 1070-1073.

Research output: Contribution to journal › Journal article › peer-review

TY - JOUR

T1 - Characterization of asymmetrical negative bias stress effect on the density-of-states and parasitic resistances in a-IGZO thin-film transistors

AU - Jo, Chunhyung

AU - Bae, Hagyoul

AU - Jun, Sungwoo

AU - Choi, Hyunjun

AU - Hwang, Seonwook

AU - Kim, Dae Hwan

AU - Kim, Dong Myong

AU - Ahn, Byung Du

AU - Lee, Je Hun

AU - Song, Junho

PY - 2013/6

Y1 - 2013/6

N2 - The dominant mechanism of the negative bias stress (NBS)-induced instability is investigated not to be a change in the subgap DOS but a change in the parasitic resistance caused by the reduced Schottky barrier of the metal contacts. This was verified by the extracted source/drain resistance and TCAD simulation.

AB - The dominant mechanism of the negative bias stress (NBS)-induced instability is investigated not to be a change in the subgap DOS but a change in the parasitic resistance caused by the reduced Schottky barrier of the metal contacts. This was verified by the extracted source/drain resistance and TCAD simulation.

UR - https://www.scopus.com/pages/publications/84905220061

U2 - 10.1002/j.2168-0159.2013.tb06409.x

DO - 10.1002/j.2168-0159.2013.tb06409.x

M3 - Journal article

AN - SCOPUS:84905220061

SN - 0097-966X

VL - 44

SP - 1070

EP - 1073

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

ER -

Characterization of asymmetrical negative bias stress effect on the density-of-states and parasitic resistances in a-IGZO thin-film transistors

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