Characterization of boron diffusion phenomena according to the specific resistivity of N-Type Si wafer

This paper is directed to characterize the boron diffusion process according to the specific resistivity of the Si wafer. N-type Si wafers were used with the specific resistivity of 0.5∼3.2 Ω-cm, 1.0∼6.5 Ω-cm and 2.0∼8.0 Ω-cm. The boron tribromide (BBr3) was used as boron source to create the PN junction on N-type Si wafer. The boron diffusion in N-type Si wafer was characterized by sheet resistance of wafer surface, secondary ion mass spectroscopy measurements (SIMS) and surface life time analysis. The degree of boron diffusion was depended on the variation in specific resistivity and sheet resistance of the bare N-type Si wafer. The boron diffused N-Si wafer exhibited the average junction depth of 750 nm and boron concentration of 1×10¹⁹. N-type Si wafer with the different specific resistance considerably affected the boron diffusion length and life time of Si wafer. It was found that the lifetime of boron diffused wafer was proportional to the sheet resistance and resistivity. However, optimization process may necessary to achieve the high efficiency through the high sheet resistance wafer, because the metallization process control is very sensitive.