Characterization of electrical and structural properties of strained-Si-on-insulator layers

Chel Jong Choi; Won Jin Jung; Myung Sim Jun; Moon Gyu Jang; Seong Jae Lee; June Park; Maeng Je Seong; Myung Ho Jung; Won Ju Cho

doi:10.1063/1.2885726

Characterization of electrical and structural properties of strained-Si-on-insulator layers

Chel Jong Choi^*
, Won Jin Jung
, Myung Sim Jun
, Moon Gyu Jang
, Seong Jae Lee
, June Park
, Maeng Je Seong
, Myung Ho Jung
, Won Ju Cho

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Electronics and Telecommunications Research Institute
Hanyang University
Chung-Ang University
Kwangwoon University

Research output: Contribution to journal › Journal article › peer-review

9 Scopus citations

Abstract

The electrical and structural properties of strained-Si-on-insulator (sSOI) wafers were investigated. The strain, calculated from two-dimensional reciprocal space mapping, was found to be 0.78%, which is comparable to that of fully relaxed Si1-x Gex film with Ge concentration of 20.6 at. %. Based on the Raman peak shift combined with measured value of strain, the strain shift coefficient is extracted to be -736 cm-1. The pseudo-metal-oxide-semiconductor field-effect transistor measurements, employed to characterize the electrical properties of sSOI wafers, showed that both electron and hole mobilities are enhanced by strain. The enhancement factor of electron mobility is larger than that of hole mobility.

Original language	English
Article number	083507
Journal	Applied Physics Letters
Volume	92
Issue number	8
DOIs	https://doi.org/10.1063/1.2885726
State	Published - 2008

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@article{602f7ef66bf14e97be54a72d9bc65b15,

title = "Characterization of electrical and structural properties of strained-Si-on-insulator layers",

abstract = "The electrical and structural properties of strained-Si-on-insulator (sSOI) wafers were investigated. The strain, calculated from two-dimensional reciprocal space mapping, was found to be 0.78\%, which is comparable to that of fully relaxed Si1-x Gex film with Ge concentration of 20.6 at. \%. Based on the Raman peak shift combined with measured value of strain, the strain shift coefficient is extracted to be -736 cm-1. The pseudo-metal-oxide-semiconductor field-effect transistor measurements, employed to characterize the electrical properties of sSOI wafers, showed that both electron and hole mobilities are enhanced by strain. The enhancement factor of electron mobility is larger than that of hole mobility.",

author = "Choi, \{Chel Jong\} and Jung, \{Won Jin\} and Jun, \{Myung Sim\} and Jang, \{Moon Gyu\} and Lee, \{Seong Jae\} and June Park and Seong, \{Maeng Je\} and Jung, \{Myung Ho\} and Cho, \{Won Ju\}",

year = "2008",

doi = "10.1063/1.2885726",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Characterization of electrical and structural properties of strained-Si-on-insulator layers

AU - Choi, Chel Jong

AU - Jung, Won Jin

AU - Jun, Myung Sim

AU - Jang, Moon Gyu

AU - Lee, Seong Jae

AU - Park, June

AU - Seong, Maeng Je

AU - Jung, Myung Ho

AU - Cho, Won Ju

PY - 2008

Y1 - 2008

N2 - The electrical and structural properties of strained-Si-on-insulator (sSOI) wafers were investigated. The strain, calculated from two-dimensional reciprocal space mapping, was found to be 0.78%, which is comparable to that of fully relaxed Si1-x Gex film with Ge concentration of 20.6 at. %. Based on the Raman peak shift combined with measured value of strain, the strain shift coefficient is extracted to be -736 cm-1. The pseudo-metal-oxide-semiconductor field-effect transistor measurements, employed to characterize the electrical properties of sSOI wafers, showed that both electron and hole mobilities are enhanced by strain. The enhancement factor of electron mobility is larger than that of hole mobility.

AB - The electrical and structural properties of strained-Si-on-insulator (sSOI) wafers were investigated. The strain, calculated from two-dimensional reciprocal space mapping, was found to be 0.78%, which is comparable to that of fully relaxed Si1-x Gex film with Ge concentration of 20.6 at. %. Based on the Raman peak shift combined with measured value of strain, the strain shift coefficient is extracted to be -736 cm-1. The pseudo-metal-oxide-semiconductor field-effect transistor measurements, employed to characterize the electrical properties of sSOI wafers, showed that both electron and hole mobilities are enhanced by strain. The enhancement factor of electron mobility is larger than that of hole mobility.

UR - https://www.scopus.com/pages/publications/40049084794

U2 - 10.1063/1.2885726

DO - 10.1063/1.2885726

M3 - Journal article

AN - SCOPUS:40049084794

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 083507

ER -

Characterization of electrical and structural properties of strained-Si-on-insulator layers

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