Characterization of intrinsic subgap density-of-states in exfoliated MoS2 FETs using a multi-frequency capacitance-conductance technique

Hagyoul Bae; Choong Ki Kim; Yang Kyu Choi

doi:10.1063/1.4985752

Characterization of intrinsic subgap density-of-states in exfoliated MoS₂ FETs using a multi-frequency capacitance-conductance technique

Hagyoul Bae
, Choong Ki Kim
, Yang Kyu Choi^*

^*Corresponding author for this work

Division of Electronic Engineering

Korea Advanced Institute of Science and Technology

Research output: Contribution to journal › Journal article › peer-review

9 Scopus citations

Abstract

A multi-frequency capacitance-conductance technique is proposed for characterizing the intrinsic density-of-states (DOS: g_int(E)) inside an energy bandgap range (E_V < E < E_C) by de-embedding the structure-dependent parameters such as parasitic capacitance and resistance in a fabricated exfoliated molybdenum disulfide (MoS₂) field effect transistor (EM-FET). The proposed technique uses the measured frequency-dispersive capacitance (C_m) and conductance (G_m=1/R_m=ωC_mD_m) data with the measured dissipation factor D_m(=G_m/ωC_m) at a frequency range of 0.3 kHz to 10 kHz. To extract g_int(E), an equivalent circuit model of the MoS₂ FET converted from a two-element model for the parallel-mode (C_m-D_m) measurement was developed with this technique.

Original language	English
Article number	075304
Journal	AIP Advances
Volume	7
Issue number	7
DOIs	https://doi.org/10.1063/1.4985752
State	Published - 2017.07.1

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title = "Characterization of intrinsic subgap density-of-states in exfoliated MoS2 FETs using a multi-frequency capacitance-conductance technique",

abstract = "A multi-frequency capacitance-conductance technique is proposed for characterizing the intrinsic density-of-states (DOS: gint(E)) inside an energy bandgap range (EV < E < EC) by de-embedding the structure-dependent parameters such as parasitic capacitance and resistance in a fabricated exfoliated molybdenum disulfide (MoS2) field effect transistor (EM-FET). The proposed technique uses the measured frequency-dispersive capacitance (Cm) and conductance (Gm=1/Rm=ωCmDm) data with the measured dissipation factor Dm(=Gm/ωCm) at a frequency range of 0.3 kHz to 10 kHz. To extract gint(E), an equivalent circuit model of the MoS2 FET converted from a two-element model for the parallel-mode (Cm-Dm) measurement was developed with this technique.",

author = "Hagyoul Bae and Kim, \{Choong Ki\} and Choi, \{Yang Kyu\}",

note = "Publisher Copyright: {\textcopyright} 2017 Author(s).",

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doi = "10.1063/1.4985752",

language = "English",

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T1 - Characterization of intrinsic subgap density-of-states in exfoliated MoS2 FETs using a multi-frequency capacitance-conductance technique

AU - Bae, Hagyoul

AU - Kim, Choong Ki

AU - Choi, Yang Kyu

PY - 2017/7/1

Y1 - 2017/7/1

N2 - A multi-frequency capacitance-conductance technique is proposed for characterizing the intrinsic density-of-states (DOS: gint(E)) inside an energy bandgap range (EV < E < EC) by de-embedding the structure-dependent parameters such as parasitic capacitance and resistance in a fabricated exfoliated molybdenum disulfide (MoS2) field effect transistor (EM-FET). The proposed technique uses the measured frequency-dispersive capacitance (Cm) and conductance (Gm=1/Rm=ωCmDm) data with the measured dissipation factor Dm(=Gm/ωCm) at a frequency range of 0.3 kHz to 10 kHz. To extract gint(E), an equivalent circuit model of the MoS2 FET converted from a two-element model for the parallel-mode (Cm-Dm) measurement was developed with this technique.

AB - A multi-frequency capacitance-conductance technique is proposed for characterizing the intrinsic density-of-states (DOS: gint(E)) inside an energy bandgap range (EV < E < EC) by de-embedding the structure-dependent parameters such as parasitic capacitance and resistance in a fabricated exfoliated molybdenum disulfide (MoS2) field effect transistor (EM-FET). The proposed technique uses the measured frequency-dispersive capacitance (Cm) and conductance (Gm=1/Rm=ωCmDm) data with the measured dissipation factor Dm(=Gm/ωCm) at a frequency range of 0.3 kHz to 10 kHz. To extract gint(E), an equivalent circuit model of the MoS2 FET converted from a two-element model for the parallel-mode (Cm-Dm) measurement was developed with this technique.

UR - https://www.scopus.com/pages/publications/85023768009

U2 - 10.1063/1.4985752

DO - 10.1063/1.4985752

M3 - Journal article

AN - SCOPUS:85023768009

SN - 2158-3226

VL - 7

JO - AIP Advances

JF - AIP Advances

IS - 7

M1 - 075304

ER -

Characterization of intrinsic subgap density-of-states in exfoliated MoS₂ FETs using a multi-frequency capacitance-conductance technique

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