Characterization of n-Ge/i-Ge/p-Si PIN photo-diode

Hyeon Deok Yang; Yeon Ho Kil; Jong Han Yang; Sukill Kang; Tae Soo Jeong; Chel Jong Choi; Taek Sung Kim; Kyu Hwan Shim

doi:10.1016/j.mssp.2014.02.003

Characterization of n-Ge/i-Ge/p-Si PIN photo-diode

Hyeon Deok Yang
, Yeon Ho Kil
, Jong Han Yang
, Sukill Kang
, Tae Soo Jeong
, Chel Jong Choi
, Taek Sung Kim^*
, Kyu Hwan Shim

^*Corresponding author for this work

Jeonbuk National University

Research output: Contribution to journal › Journal article › peer-review

12 Scopus citations

Abstract

A PIN photo-diode was fabricated from the phosphorus doped n-Ge/i-Ge/p-Si hetero-structure grown by rapid thermal chemical vapor deposition (RTCVD). The surface morphology of the n-Ge/i-Ge layer was found to be mirror like and the n-Ge/i-Ge layer was under a tensile strain of ∼0.071%. The phosphorus doping concentration and the RMS surface roughness were 2×10¹⁹ cm^-3 and 2.46 nm, respectively. Current-voltage characteristics of the PIN photo-diode showed a forward saturation current density of 0.63 A/cm² at 2 V and reverse-biased characteristics behaved similar to forward-biased characteristics of the diode. Roll-off in spectral response was observed at wavelengths greater than 1600 nm which could be attributed to decreased absorption of Ge at room temperature.

Original language	English
Pages (from-to)	37-43
Number of pages	7
Journal	Materials Science in Semiconductor Processing
Volume	22
Issue number	1
DOIs	https://doi.org/10.1016/j.mssp.2014.02.003
State	Published - 2014.06

Keywords

CVD
Ge
Hetero structure
PIN photo-diode

Quacquarelli Symonds(QS) Subject Topics

Engineering - Mechanical
Materials Science
Physics & Astronomy

Access to Document

10.1016/j.mssp.2014.02.003

Cite this

@article{9055f3e35dbd44eb9e0ea52c3a384d0a,

title = "Characterization of n-Ge/i-Ge/p-Si PIN photo-diode",

abstract = "A PIN photo-diode was fabricated from the phosphorus doped n-Ge/i-Ge/p-Si hetero-structure grown by rapid thermal chemical vapor deposition (RTCVD). The surface morphology of the n-Ge/i-Ge layer was found to be mirror like and the n-Ge/i-Ge layer was under a tensile strain of ∼0.071\%. The phosphorus doping concentration and the RMS surface roughness were 2×1019 cm-3 and 2.46 nm, respectively. Current-voltage characteristics of the PIN photo-diode showed a forward saturation current density of 0.63 A/cm2 at 2 V and reverse-biased characteristics behaved similar to forward-biased characteristics of the diode. Roll-off in spectral response was observed at wavelengths greater than 1600 nm which could be attributed to decreased absorption of Ge at room temperature.",

keywords = "CVD, Ge, Hetero structure, PIN photo-diode",

author = "\{Deok Yang\}, Hyeon and Kil, \{Yeon Ho\} and Yang, \{Jong Han\} and Sukill Kang and \{Soo Jeong\}, Tae and Choi, \{Chel Jong\} and \{Sung Kim\}, Taek and Shim, \{Kyu Hwan\}",

year = "2014",

month = jun,

doi = "10.1016/j.mssp.2014.02.003",

language = "English",

volume = "22",

pages = "37--43",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

number = "1",

}

TY - JOUR

T1 - Characterization of n-Ge/i-Ge/p-Si PIN photo-diode

AU - Deok Yang, Hyeon

AU - Kil, Yeon Ho

AU - Yang, Jong Han

AU - Kang, Sukill

AU - Soo Jeong, Tae

AU - Choi, Chel Jong

AU - Sung Kim, Taek

AU - Shim, Kyu Hwan

PY - 2014/6

Y1 - 2014/6

N2 - A PIN photo-diode was fabricated from the phosphorus doped n-Ge/i-Ge/p-Si hetero-structure grown by rapid thermal chemical vapor deposition (RTCVD). The surface morphology of the n-Ge/i-Ge layer was found to be mirror like and the n-Ge/i-Ge layer was under a tensile strain of ∼0.071%. The phosphorus doping concentration and the RMS surface roughness were 2×1019 cm-3 and 2.46 nm, respectively. Current-voltage characteristics of the PIN photo-diode showed a forward saturation current density of 0.63 A/cm2 at 2 V and reverse-biased characteristics behaved similar to forward-biased characteristics of the diode. Roll-off in spectral response was observed at wavelengths greater than 1600 nm which could be attributed to decreased absorption of Ge at room temperature.

AB - A PIN photo-diode was fabricated from the phosphorus doped n-Ge/i-Ge/p-Si hetero-structure grown by rapid thermal chemical vapor deposition (RTCVD). The surface morphology of the n-Ge/i-Ge layer was found to be mirror like and the n-Ge/i-Ge layer was under a tensile strain of ∼0.071%. The phosphorus doping concentration and the RMS surface roughness were 2×1019 cm-3 and 2.46 nm, respectively. Current-voltage characteristics of the PIN photo-diode showed a forward saturation current density of 0.63 A/cm2 at 2 V and reverse-biased characteristics behaved similar to forward-biased characteristics of the diode. Roll-off in spectral response was observed at wavelengths greater than 1600 nm which could be attributed to decreased absorption of Ge at room temperature.

KW - CVD

KW - Ge

KW - Hetero structure

KW - PIN photo-diode

UR - https://www.scopus.com/pages/publications/84894561592

U2 - 10.1016/j.mssp.2014.02.003

DO - 10.1016/j.mssp.2014.02.003

M3 - Journal article

AN - SCOPUS:84894561592

SN - 1369-8001

VL - 22

SP - 37

EP - 43

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 1

ER -

Characterization of n-Ge/i-Ge/p-Si PIN photo-diode

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

Access to Document

Other files and links

Fingerprint

Cite this