Characterization of n-type Ge layer on Si(100) substrates grown by rapid thermal chemical vapor deposition

Research output: Contribution to journal › Journal article › peer-review

Original language	Korean
Journal	Materials Science in Semiconductor Processing
State	Published - 2013.12.1

Cite this

@article{4658bf34919540fa9bdbe68ace05c3c4,

title = "Characterization of n-type Ge layer on Si(100) substrates grown by rapid thermal chemical vapor deposition",

author = "Sukill Kang and Kyu-Hwan Shim",

year = "2013",

month = dec,

day = "1",

language = "Korean",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

}