Characterization of new infrared nonlinear optical material with high laser damage threshold, Li2Ga2GeS6

Youngsik Kim; In Seok Seo; Steve W. Martin; Jaewook Baek; P. Shiv Halasyamani; Nachiappan Arumugam; Hugo Steinfink

doi:10.1021/cm8007304

Characterization of new infrared nonlinear optical material with high laser damage threshold, Li₂Ga₂GeS₆

Youngsik Kim
, In Seok Seo
, Steve W. Martin
, Jaewook Baek
, P. Shiv Halasyamani
, Nachiappan Arumugam
, Hugo Steinfink

Information Materials Engineering

Iowa State University
University of Texas at Austin
University of Houston

Research output: Contribution to journal › Journal article › peer-review

196 Scopus citations

Abstract

A new thio-germanium sulfide Li₂Ga₂GeS₆ has been synthesized for the first time and its structure was found to be isomorphous with AgGaGeS₄, which is well-known as a promising infrared NLO material. The host structure is built of GaS₄ tetrahedra linked by corners to GeS₄ tetrahedra to create a 3D framework forming tunnels along the c-axis, in which the Li⁺ ions are located. The second harmonic generation (SHG) efficiency determined on powders of Li ₂Ga₂GaS₆ is ∼200 times larger than that of α-SiO₂. Unlike AgGaS₂ and AgGaGeS₄, Li₂Ga₂GeS₆ was observed to be very stable under prolonged Nd:YAG 1.064 μm laser pumping, indicative of a large improvement in laser damage threshold. This new material could supplant Ag phases in the next generation of high-power infrared NLO applications.

Original language	English
Pages (from-to)	6048-6052
Number of pages	5
Journal	Chemistry of Materials
Volume	20
Issue number	19
DOIs	https://doi.org/10.1021/cm8007304
State	Published - 2008.10.14

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10.1021/cm8007304

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@article{c4d3409726f94909bff8c5ed00162739,

title = "Characterization of new infrared nonlinear optical material with high laser damage threshold, Li2Ga2GeS6",

abstract = "A new thio-germanium sulfide Li2Ga2GeS6 has been synthesized for the first time and its structure was found to be isomorphous with AgGaGeS4, which is well-known as a promising infrared NLO material. The host structure is built of GaS4 tetrahedra linked by corners to GeS4 tetrahedra to create a 3D framework forming tunnels along the c-axis, in which the Li+ ions are located. The second harmonic generation (SHG) efficiency determined on powders of Li 2Ga2GaS6 is ∼200 times larger than that of α-SiO2. Unlike AgGaS2 and AgGaGeS4, Li2Ga2GeS6 was observed to be very stable under prolonged Nd:YAG 1.064 μm laser pumping, indicative of a large improvement in laser damage threshold. This new material could supplant Ag phases in the next generation of high-power infrared NLO applications.",

author = "Youngsik Kim and Seo, \{In Seok\} and Martin, \{Steve W.\} and Jaewook Baek and Halasyamani, \{P. Shiv\} and Nachiappan Arumugam and Hugo Steinfink",

year = "2008",

month = oct,

day = "14",

doi = "10.1021/cm8007304",

language = "English",

volume = "20",

pages = "6048--6052",

journal = "Chemistry of Materials",

issn = "0897-4756",

number = "19",

}

TY - JOUR

T1 - Characterization of new infrared nonlinear optical material with high laser damage threshold, Li2Ga2GeS6

AU - Kim, Youngsik

AU - Seo, In Seok

AU - Martin, Steve W.

AU - Baek, Jaewook

AU - Halasyamani, P. Shiv

AU - Arumugam, Nachiappan

AU - Steinfink, Hugo

PY - 2008/10/14

Y1 - 2008/10/14

N2 - A new thio-germanium sulfide Li2Ga2GeS6 has been synthesized for the first time and its structure was found to be isomorphous with AgGaGeS4, which is well-known as a promising infrared NLO material. The host structure is built of GaS4 tetrahedra linked by corners to GeS4 tetrahedra to create a 3D framework forming tunnels along the c-axis, in which the Li+ ions are located. The second harmonic generation (SHG) efficiency determined on powders of Li 2Ga2GaS6 is ∼200 times larger than that of α-SiO2. Unlike AgGaS2 and AgGaGeS4, Li2Ga2GeS6 was observed to be very stable under prolonged Nd:YAG 1.064 μm laser pumping, indicative of a large improvement in laser damage threshold. This new material could supplant Ag phases in the next generation of high-power infrared NLO applications.

AB - A new thio-germanium sulfide Li2Ga2GeS6 has been synthesized for the first time and its structure was found to be isomorphous with AgGaGeS4, which is well-known as a promising infrared NLO material. The host structure is built of GaS4 tetrahedra linked by corners to GeS4 tetrahedra to create a 3D framework forming tunnels along the c-axis, in which the Li+ ions are located. The second harmonic generation (SHG) efficiency determined on powders of Li 2Ga2GaS6 is ∼200 times larger than that of α-SiO2. Unlike AgGaS2 and AgGaGeS4, Li2Ga2GeS6 was observed to be very stable under prolonged Nd:YAG 1.064 μm laser pumping, indicative of a large improvement in laser damage threshold. This new material could supplant Ag phases in the next generation of high-power infrared NLO applications.

UR - https://www.scopus.com/pages/publications/54849420061

U2 - 10.1021/cm8007304

DO - 10.1021/cm8007304

M3 - Journal article

AN - SCOPUS:54849420061

SN - 0897-4756

VL - 20

SP - 6048

EP - 6052

JO - Chemistry of Materials

JF - Chemistry of Materials

IS - 19

ER -

Characterization of new infrared nonlinear optical material with high laser damage threshold, Li₂Ga₂GeS₆

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