@inproceedings{2300aaddc4ce4d82b54e9cae5f5b68f8,
title = "Characterization of SiGe/Si quantum dot grown by using APRPCVD",
abstract = "We have investigated the characterization of SiGe/Si quantum dot (QD) grown directly onto Si (001) substrates using atmospheric pressure reduced pressure chemical vapor deposition (APRPCVD) system in an ASM Epsilon One. The structural properties of the SiGe/Si QD were investigated using X-ray diffraction (XRD), SEM and TEM. The optical properties of the SiGe/Si QD were investigated using Raman spectroscopy and photocurrent (PC) measurement. The transition peaks related to the QD region observed in the PC spectrum were preliminarily assigned to electron-heavy hole (e-hh) and electron-light hole (e-lh) transitions.",
author = "Kim, \{T. S.\} and Jeong, \{M. R.\} and Mun, \{N. J.\} and Kil, \{Y. H.\} and Kim, \{J. D.\} and Jeong, \{T. S.\} and S. Kang and Kim, \{S. H.\} and Choi, \{C. J.\} and Shim, \{K. H.\}",
year = "2009",
doi = "10.1149/1.3204415",
language = "English",
isbn = "9781566777407",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "3",
pages = "263--269",
booktitle = "ECS Transactions - Analytical Techniques for Semiconductor Materials and Process Characterization 6, ALTECH 2009",
edition = "3",
note = "Analytical Techniques for Semiconductor Materials and Process Characterization 6, ALTECH 2009 - 216th ECS Meeting ; Conference date: 04-10-2009 Through 09-10-2009",
}