Chemical and structural properties of ternary post-transition metal oxide thin films: InZnO, InGaO and GaZnO

Deok Yong Cho

doi:10.1016/j.cap.2015.07.022

Chemical and structural properties of ternary post-transition metal oxide thin films: InZnO, InGaO and GaZnO

Deok Yong Cho^*

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

5 Scopus citations

Abstract

The chemical states of ternary post-transition metal oxide thin films of InGaO, GaZnO and InZnO were investigated using X-ray photoelectron spectroscopy. Detailed binding energy (BE) analyses revealed certain evolution in chemistry in the ternary oxides compared to the reference binary oxides of In₂O₃, ZnO, or Ga₂O₃. In particular, O 1s BEs were changed with the compositions, which suggests that the charge transfer (CT) between In³⁺/Ga³⁺/Zn²⁺ and O^2- ions is significant. Results of extended X-ray absorption fine structure analyses further showed that the first shell coordination (cation-O bond) is roughly maintained even though the ternary oxide films were structurally disordered. This implies that the CT process via O^2- ions can influence the charge reconstructions in the ternary oxide systems.

Original language	English
Pages (from-to)	1337-1341
Number of pages	5
Journal	Current Applied Physics
Volume	15
Issue number	11
DOIs	https://doi.org/10.1016/j.cap.2015.07.022
State	Published - 2015.11.1

Keywords

Gallium zinc oxide
Indium gallium oxide
Indium zinc oxide
Transparent semiconductor
X-ray photoelectron spectroscopy

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Physics & Astronomy

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10.1016/j.cap.2015.07.022

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@article{aaf2ec2285344b36b8fb54ba7c9b57ef,

title = "Chemical and structural properties of ternary post-transition metal oxide thin films: InZnO, InGaO and GaZnO",

abstract = "The chemical states of ternary post-transition metal oxide thin films of InGaO, GaZnO and InZnO were investigated using X-ray photoelectron spectroscopy. Detailed binding energy (BE) analyses revealed certain evolution in chemistry in the ternary oxides compared to the reference binary oxides of In2O3, ZnO, or Ga2O3. In particular, O 1s BEs were changed with the compositions, which suggests that the charge transfer (CT) between In3+/Ga3+/Zn2+ and O2- ions is significant. Results of extended X-ray absorption fine structure analyses further showed that the first shell coordination (cation-O bond) is roughly maintained even though the ternary oxide films were structurally disordered. This implies that the CT process via O2- ions can influence the charge reconstructions in the ternary oxide systems.",

keywords = "Gallium zinc oxide, Indium gallium oxide, Indium zinc oxide, Transparent semiconductor, X-ray photoelectron spectroscopy",

author = "Cho, \{Deok Yong\}",

note = "Publisher Copyright: {\textcopyright} 2015 Elsevier B.V.",

year = "2015",

month = nov,

day = "1",

doi = "10.1016/j.cap.2015.07.022",

language = "English",

volume = "15",

pages = "1337--1341",

journal = "Current Applied Physics",

issn = "1567-1739",

number = "11",

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TY - JOUR

T1 - Chemical and structural properties of ternary post-transition metal oxide thin films

T2 - InZnO, InGaO and GaZnO

AU - Cho, Deok Yong

PY - 2015/11/1

Y1 - 2015/11/1

N2 - The chemical states of ternary post-transition metal oxide thin films of InGaO, GaZnO and InZnO were investigated using X-ray photoelectron spectroscopy. Detailed binding energy (BE) analyses revealed certain evolution in chemistry in the ternary oxides compared to the reference binary oxides of In2O3, ZnO, or Ga2O3. In particular, O 1s BEs were changed with the compositions, which suggests that the charge transfer (CT) between In3+/Ga3+/Zn2+ and O2- ions is significant. Results of extended X-ray absorption fine structure analyses further showed that the first shell coordination (cation-O bond) is roughly maintained even though the ternary oxide films were structurally disordered. This implies that the CT process via O2- ions can influence the charge reconstructions in the ternary oxide systems.

AB - The chemical states of ternary post-transition metal oxide thin films of InGaO, GaZnO and InZnO were investigated using X-ray photoelectron spectroscopy. Detailed binding energy (BE) analyses revealed certain evolution in chemistry in the ternary oxides compared to the reference binary oxides of In2O3, ZnO, or Ga2O3. In particular, O 1s BEs were changed with the compositions, which suggests that the charge transfer (CT) between In3+/Ga3+/Zn2+ and O2- ions is significant. Results of extended X-ray absorption fine structure analyses further showed that the first shell coordination (cation-O bond) is roughly maintained even though the ternary oxide films were structurally disordered. This implies that the CT process via O2- ions can influence the charge reconstructions in the ternary oxide systems.

KW - Gallium zinc oxide

KW - Indium gallium oxide

KW - Indium zinc oxide

KW - Transparent semiconductor

KW - X-ray photoelectron spectroscopy

UR - https://www.scopus.com/pages/publications/84942991683

U2 - 10.1016/j.cap.2015.07.022

DO - 10.1016/j.cap.2015.07.022

M3 - Journal article

AN - SCOPUS:84942991683

SN - 1567-1739

VL - 15

SP - 1337

EP - 1341

JO - Current Applied Physics

JF - Current Applied Physics

IS - 11

ER -

Chemical and structural properties of ternary post-transition metal oxide thin films: InZnO, InGaO and GaZnO

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

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