Chemical structures and electrical properties of atomic layer deposited HfO                         2                          thin films grown at an extremely low temperature (≤100 C) using O                         3                          as an oxygen source

Jeong Hwan Kim; Tae Joo Park; Seong Keun Kim; Deok Yong Cho; Hyung Suk Jung; Sang Young Lee; Cheol Seong Hwang

doi:10.1016/j.apsusc.2013.12.061

Chemical structures and electrical properties of atomic layer deposited HfO ₂ thin films grown at an extremely low temperature (≤100 C) using O ₃ as an oxygen source

Jeong Hwan Kim
, Tae Joo Park^*
, Seong Keun Kim
, Deok Yong Cho
, Hyung Suk Jung
, Sang Young Lee
, Cheol Seong Hwang

^*Corresponding author for this work

Department of Physics

Seoul National University
Korea Institute of Machinery and Materials
Hanyang University
Korea Institute of Science and Technology

Research output: Contribution to journal › Journal article › peer-review

35 Scopus citations

Abstract

The properties of atomic layer deposited (ALD) HfO ₂ films grown at low temperatures (≤100 C) were examined for potential applications in flexible display and bioelectronics. A saturated ALD growth behavior was observed even at an extremely low temperature (30 C) due to the strong oxidizing potential of O ₃ . However, HfO ₂ films grown at low temperatures showed a low film density and high impurity concentration, because the thermal energy during film growth was insufficient to remove ligands completely from Hf ions in precursor molecule. This resulted in low dielectric constant and high leakage current density of the films. Nevertheless, HfO ₂ film grown at 100 C using O ₃ gas with a high concentration (390 g/Nm ³ ) showed a tolerable impurity concentration with the dielectric constant of ∼16 and breakdown field of ∼4 MV/cm, which are approximately two-thirds of those of HfO ₂ film grown at 250 C.

Original language	English
Pages (from-to)	852-856
Number of pages	5
Journal	Applied Surface Science
Volume	292
DOIs	https://doi.org/10.1016/j.apsusc.2013.12.061
State	Published - 2014.02.15

Keywords

Atomic layer deposition
Low temperature process
Ozone concentration

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10.1016/j.apsusc.2013.12.061

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Kim, J. H., Park, T. J., Kim, S. K., Cho, D. Y., Jung, H. S., Lee, S. Y., & Hwang, C. S. (2014). Chemical structures and electrical properties of atomic layer deposited HfO ₂ thin films grown at an extremely low temperature (≤100 C) using O ₃ as an oxygen source. Applied Surface Science, 292, 852-856. https://doi.org/10.1016/j.apsusc.2013.12.061

Kim, Jeong Hwan ; Park, Tae Joo ; Kim, Seong Keun et al. / Chemical structures and electrical properties of atomic layer deposited HfO ₂ thin films grown at an extremely low temperature (≤100 C) using O ₃ as an oxygen source. In: Applied Surface Science. 2014 ; Vol. 292. pp. 852-856.

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title = "Chemical structures and electrical properties of atomic layer deposited HfO 2 thin films grown at an extremely low temperature (≤100 C) using O 3 as an oxygen source",

abstract = " The properties of atomic layer deposited (ALD) HfO 2 films grown at low temperatures (≤100 C) were examined for potential applications in flexible display and bioelectronics. A saturated ALD growth behavior was observed even at an extremely low temperature (30 C) due to the strong oxidizing potential of O 3 . However, HfO 2 films grown at low temperatures showed a low film density and high impurity concentration, because the thermal energy during film growth was insufficient to remove ligands completely from Hf ions in precursor molecule. This resulted in low dielectric constant and high leakage current density of the films. Nevertheless, HfO 2 film grown at 100 C using O 3 gas with a high concentration (390 g/Nm 3 ) showed a tolerable impurity concentration with the dielectric constant of ∼16 and breakdown field of ∼4 MV/cm, which are approximately two-thirds of those of HfO 2 film grown at 250 C.",

keywords = "Atomic layer deposition, Low temperature process, Ozone concentration",

author = "Kim, \{Jeong Hwan\} and Park, \{Tae Joo\} and Kim, \{Seong Keun\} and Cho, \{Deok Yong\} and Jung, \{Hyung Suk\} and Lee, \{Sang Young\} and Hwang, \{Cheol Seong\}",

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day = "15",

doi = "10.1016/j.apsusc.2013.12.061",

language = "English",

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pages = "852--856",

journal = "Applied Surface Science",

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Kim, JH, Park, TJ, Kim, SK, Cho, DY, Jung, HS, Lee, SY & Hwang, CS 2014, 'Chemical structures and electrical properties of atomic layer deposited HfO ₂ thin films grown at an extremely low temperature (≤100 C) using O ₃ as an oxygen source', Applied Surface Science, vol. 292, pp. 852-856. https://doi.org/10.1016/j.apsusc.2013.12.061

Chemical structures and electrical properties of atomic layer deposited HfO ₂ thin films grown at an extremely low temperature (≤100 C) using O ₃ as an oxygen source. / Kim, Jeong Hwan; Park, Tae Joo; Kim, Seong Keun et al.
In: Applied Surface Science, Vol. 292, 15.02.2014, p. 852-856.

Research output: Contribution to journal › Journal article › peer-review

TY - JOUR

T1 - Chemical structures and electrical properties of atomic layer deposited HfO 2 thin films grown at an extremely low temperature (≤100 C) using O 3 as an oxygen source

AU - Kim, Jeong Hwan

AU - Park, Tae Joo

AU - Kim, Seong Keun

AU - Cho, Deok Yong

AU - Jung, Hyung Suk

AU - Lee, Sang Young

AU - Hwang, Cheol Seong

PY - 2014/2/15

Y1 - 2014/2/15

N2 - The properties of atomic layer deposited (ALD) HfO 2 films grown at low temperatures (≤100 C) were examined for potential applications in flexible display and bioelectronics. A saturated ALD growth behavior was observed even at an extremely low temperature (30 C) due to the strong oxidizing potential of O 3 . However, HfO 2 films grown at low temperatures showed a low film density and high impurity concentration, because the thermal energy during film growth was insufficient to remove ligands completely from Hf ions in precursor molecule. This resulted in low dielectric constant and high leakage current density of the films. Nevertheless, HfO 2 film grown at 100 C using O 3 gas with a high concentration (390 g/Nm 3 ) showed a tolerable impurity concentration with the dielectric constant of ∼16 and breakdown field of ∼4 MV/cm, which are approximately two-thirds of those of HfO 2 film grown at 250 C.

AB - The properties of atomic layer deposited (ALD) HfO 2 films grown at low temperatures (≤100 C) were examined for potential applications in flexible display and bioelectronics. A saturated ALD growth behavior was observed even at an extremely low temperature (30 C) due to the strong oxidizing potential of O 3 . However, HfO 2 films grown at low temperatures showed a low film density and high impurity concentration, because the thermal energy during film growth was insufficient to remove ligands completely from Hf ions in precursor molecule. This resulted in low dielectric constant and high leakage current density of the films. Nevertheless, HfO 2 film grown at 100 C using O 3 gas with a high concentration (390 g/Nm 3 ) showed a tolerable impurity concentration with the dielectric constant of ∼16 and breakdown field of ∼4 MV/cm, which are approximately two-thirds of those of HfO 2 film grown at 250 C.

KW - Atomic layer deposition

KW - Low temperature process

KW - Ozone concentration

UR - https://www.scopus.com/pages/publications/84893644368

U2 - 10.1016/j.apsusc.2013.12.061

DO - 10.1016/j.apsusc.2013.12.061

M3 - Journal article

AN - SCOPUS:84893644368

SN - 0169-4332

VL - 292

SP - 852

EP - 856

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Kim JH, Park TJ, Kim SK, Cho DY, Jung HS, Lee SY et al. Chemical structures and electrical properties of atomic layer deposited HfO ₂ thin films grown at an extremely low temperature (≤100 C) using O ₃ as an oxygen source. Applied Surface Science. 2014 Feb 15;292:852-856. doi: 10.1016/j.apsusc.2013.12.061

Chemical structures and electrical properties of atomic layer deposited HfO ₂ thin films grown at an extremely low temperature (≤100 C) using O ₃ as an oxygen source

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Keywords

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