Cl2-based dry etching of GaN films under inductively coupled plasma conditions

Y. H. Im; J. S. Park; Y. B. Hahn; K. S. Nahm; Y. S. Lee; B. C. Cho; K. Y. Lim; H. J. Lee; S. J. Pearton

doi:10.1116/1.1286363

Cl₂-based dry etching of GaN films under inductively coupled plasma conditions

Y. H. Im^*
, J. S. Park
, Y. B. Hahn
, K. S. Nahm
, Y. S. Lee
, B. C. Cho
, K. Y. Lim
, H. J. Lee
, S. J. Pearton

^*Corresponding author for this work

Division of Chemical Engineering

Research output: Contribution to journal › Conference article › peer-review

20 Scopus citations

Abstract

Inductively coupled plasma (ICP) dry etching of gallium nitride films in chlorine (Cl₂)-based discharges was carried out. The etching was done in planar type reactor under different radio frequency (RF) chuck power frequencies of 100 kHz and 13.56 MHz. The etch rate were greatly effected by the ICP source power, RF chuck power, pressure, and chlorine concentration. The surface roughness was found independent of the chuck power.

Original language	English
Pages (from-to)	2169-2174
Number of pages	6
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	18
Issue number	5
DOIs	https://doi.org/10.1116/1.1286363
State	Published - 2000.09
Event	47th International Symposium: Vacuum, Thin Films, Surfaces/Interfaces, and Processing - Boston, USA Duration: 2000.10.2 → 2000.10.6

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Physics & Astronomy

Access to Document

10.1116/1.1286363

Cite this

@article{70a0a794f1a14edab65968e57644c9df,

title = "Cl2-based dry etching of GaN films under inductively coupled plasma conditions",

abstract = "Inductively coupled plasma (ICP) dry etching of gallium nitride films in chlorine (Cl2)-based discharges was carried out. The etching was done in planar type reactor under different radio frequency (RF) chuck power frequencies of 100 kHz and 13.56 MHz. The etch rate were greatly effected by the ICP source power, RF chuck power, pressure, and chlorine concentration. The surface roughness was found independent of the chuck power.",

author = "Im, \{Y. H.\} and Park, \{J. S.\} and Hahn, \{Y. B.\} and Nahm, \{K. S.\} and Lee, \{Y. S.\} and Cho, \{B. C.\} and Lim, \{K. Y.\} and Lee, \{H. J.\} and Pearton, \{S. J.\}",

year = "2000",

month = sep,

doi = "10.1116/1.1286363",

language = "English",

volume = "18",

pages = "2169--2174",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

number = "5",

note = "47th International Symposium: Vacuum, Thin Films, Surfaces/Interfaces, and Processing ; Conference date: 02-10-2000 Through 06-10-2000",

}

TY - JOUR

T1 - Cl2-based dry etching of GaN films under inductively coupled plasma conditions

AU - Im, Y. H.

AU - Park, J. S.

AU - Hahn, Y. B.

AU - Nahm, K. S.

AU - Lee, Y. S.

AU - Cho, B. C.

AU - Lim, K. Y.

AU - Lee, H. J.

AU - Pearton, S. J.

PY - 2000/9

Y1 - 2000/9

N2 - Inductively coupled plasma (ICP) dry etching of gallium nitride films in chlorine (Cl2)-based discharges was carried out. The etching was done in planar type reactor under different radio frequency (RF) chuck power frequencies of 100 kHz and 13.56 MHz. The etch rate were greatly effected by the ICP source power, RF chuck power, pressure, and chlorine concentration. The surface roughness was found independent of the chuck power.

AB - Inductively coupled plasma (ICP) dry etching of gallium nitride films in chlorine (Cl2)-based discharges was carried out. The etching was done in planar type reactor under different radio frequency (RF) chuck power frequencies of 100 kHz and 13.56 MHz. The etch rate were greatly effected by the ICP source power, RF chuck power, pressure, and chlorine concentration. The surface roughness was found independent of the chuck power.

UR - https://www.scopus.com/pages/publications/0034350343

U2 - 10.1116/1.1286363

DO - 10.1116/1.1286363

M3 - Conference article

AN - SCOPUS:0034350343

SN - 0734-2101

VL - 18

SP - 2169

EP - 2174

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 5

T2 - 47th International Symposium: Vacuum, Thin Films, Surfaces/Interfaces, and Processing

Y2 - 2 October 2000 through 6 October 2000

ER -

Cl₂-based dry etching of GaN films under inductively coupled plasma conditions

Abstract

Quacquarelli Symonds(QS) Subject Topics

Access to Document

Other files and links

Fingerprint

Cite this