Codoping characteristics of Zn with Mg in GaN

K. S. Kim; M. S. Han; G. M. Yang; C. J. Youn; H. J. Lee; H. K. Cho; J. Y. Lee

doi:10.1063/1.1289494

Codoping characteristics of Zn with Mg in GaN

K. S. Kim
, M. S. Han
, G. M. Yang^*
, C. J. Youn
, H. J. Lee
, H. K. Cho
, J. Y. Lee

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Research output: Contribution to journal › Journal article › peer-review

34 Scopus citations

Abstract

The doping characteristics of Mg-Zn codoped GaN films grown by metalorganic chemical vapor deposition are investigated. By means of the concept of Mg-Zn codoping technique, we have grown p-GaN showing a low electrical resistivity (0.72 Ω cm) and a high hole concentration (8.5 × 10¹⁷ cm^-3) without structural degradation of the film. It is thought that the codoping of Zn atoms with Mg raises the Mg activation ratio by reducing the hydrogen solubility in p-GaN. In addition, the measured specific contact resistance of Mg-Zn codoped GaN film is 5.0×10^-4 Ω cm², which is one order of magnitude lower than that of Mg doped only GaN film (1.9×10^-3 Ω cm²).

Original language	English
Pages (from-to)	1123-1125
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	8
DOIs	https://doi.org/10.1063/1.1289494
State	Published - 2000.08.21

Quacquarelli Symonds(QS) Subject Topics

Physics & Astronomy

Access to Document

10.1063/1.1289494

Cite this

@article{fbda0f6587c8409fbb025302c84df4fd,

title = "Codoping characteristics of Zn with Mg in GaN",

abstract = "The doping characteristics of Mg-Zn codoped GaN films grown by metalorganic chemical vapor deposition are investigated. By means of the concept of Mg-Zn codoping technique, we have grown p-GaN showing a low electrical resistivity (0.72 Ω cm) and a high hole concentration (8.5 × 1017 cm-3) without structural degradation of the film. It is thought that the codoping of Zn atoms with Mg raises the Mg activation ratio by reducing the hydrogen solubility in p-GaN. In addition, the measured specific contact resistance of Mg-Zn codoped GaN film is 5.0×10-4 Ω cm2, which is one order of magnitude lower than that of Mg doped only GaN film (1.9×10-3 Ω cm2).",

author = "Kim, \{K. S.\} and Han, \{M. S.\} and Yang, \{G. M.\} and Youn, \{C. J.\} and Lee, \{H. J.\} and Cho, \{H. K.\} and Lee, \{J. Y.\}",

year = "2000",

month = aug,

day = "21",

doi = "10.1063/1.1289494",

language = "English",

volume = "77",

pages = "1123--1125",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "8",

}

TY - JOUR

T1 - Codoping characteristics of Zn with Mg in GaN

AU - Kim, K. S.

AU - Han, M. S.

AU - Yang, G. M.

AU - Youn, C. J.

AU - Lee, H. J.

AU - Cho, H. K.

AU - Lee, J. Y.

PY - 2000/8/21

Y1 - 2000/8/21

N2 - The doping characteristics of Mg-Zn codoped GaN films grown by metalorganic chemical vapor deposition are investigated. By means of the concept of Mg-Zn codoping technique, we have grown p-GaN showing a low electrical resistivity (0.72 Ω cm) and a high hole concentration (8.5 × 1017 cm-3) without structural degradation of the film. It is thought that the codoping of Zn atoms with Mg raises the Mg activation ratio by reducing the hydrogen solubility in p-GaN. In addition, the measured specific contact resistance of Mg-Zn codoped GaN film is 5.0×10-4 Ω cm2, which is one order of magnitude lower than that of Mg doped only GaN film (1.9×10-3 Ω cm2).

AB - The doping characteristics of Mg-Zn codoped GaN films grown by metalorganic chemical vapor deposition are investigated. By means of the concept of Mg-Zn codoping technique, we have grown p-GaN showing a low electrical resistivity (0.72 Ω cm) and a high hole concentration (8.5 × 1017 cm-3) without structural degradation of the film. It is thought that the codoping of Zn atoms with Mg raises the Mg activation ratio by reducing the hydrogen solubility in p-GaN. In addition, the measured specific contact resistance of Mg-Zn codoped GaN film is 5.0×10-4 Ω cm2, which is one order of magnitude lower than that of Mg doped only GaN film (1.9×10-3 Ω cm2).

UR - https://www.scopus.com/pages/publications/0000972314

U2 - 10.1063/1.1289494

DO - 10.1063/1.1289494

M3 - Journal article

AN - SCOPUS:0000972314

SN - 0003-6951

VL - 77

SP - 1123

EP - 1125

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Codoping characteristics of Zn with Mg in GaN

Abstract

Quacquarelli Symonds(QS) Subject Topics

Access to Document

Other files and links

Fingerprint

Cite this