Coexistence of unipolar and bipolar resistive switching characteristics in ZnO thin films

Seunghyup Lee; Heejin Kim; Jinjoo Park; Kijung Yong

doi:10.1063/1.3489882

Coexistence of unipolar and bipolar resistive switching characteristics in ZnO thin films

Seunghyup Lee^*
, Heejin Kim
, Jinjoo Park
, Kijung Yong

^*Corresponding author for this work

Division of Chemical Engineering

Pohang University of Science and Technology

Research output: Contribution to journal › Journal article › peer-review

100 Scopus citations

Abstract

This paper reports the coexistence of unipolar and bipolar resistive switching (BRS) in an Ag/ZnO/Pt structure fabricated by sputtering deposition at room temperature. The structure shows reproducible and stable unipolar resistive switching after electroforming with high compliance current (I _c) =40 mA, regardless of the applied voltage polarity. With low I_c =5 mA at electroforming, BRS was also observed; this phenomenon depended on the voltage polarity. Both states were stable and reproducible over 100 cycles. The switching mode was changed with adjusting I_c but the transition was irreversible. Based on the results, switching mechanism based on filament theory is proposed to explain both resistive switching.

Original language	English
Article number	076101
Journal	Journal of Applied Physics
Volume	108
Issue number	7
DOIs	https://doi.org/10.1063/1.3489882
State	Published - 2010.10.1

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title = "Coexistence of unipolar and bipolar resistive switching characteristics in ZnO thin films",

abstract = "This paper reports the coexistence of unipolar and bipolar resistive switching (BRS) in an Ag/ZnO/Pt structure fabricated by sputtering deposition at room temperature. The structure shows reproducible and stable unipolar resistive switching after electroforming with high compliance current (I c) =40 mA, regardless of the applied voltage polarity. With low Ic =5 mA at electroforming, BRS was also observed; this phenomenon depended on the voltage polarity. Both states were stable and reproducible over 100 cycles. The switching mode was changed with adjusting Ic but the transition was irreversible. Based on the results, switching mechanism based on filament theory is proposed to explain both resistive switching.",

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T1 - Coexistence of unipolar and bipolar resistive switching characteristics in ZnO thin films

AU - Lee, Seunghyup

AU - Kim, Heejin

AU - Park, Jinjoo

AU - Yong, Kijung

PY - 2010/10/1

Y1 - 2010/10/1

N2 - This paper reports the coexistence of unipolar and bipolar resistive switching (BRS) in an Ag/ZnO/Pt structure fabricated by sputtering deposition at room temperature. The structure shows reproducible and stable unipolar resistive switching after electroforming with high compliance current (I c) =40 mA, regardless of the applied voltage polarity. With low Ic =5 mA at electroforming, BRS was also observed; this phenomenon depended on the voltage polarity. Both states were stable and reproducible over 100 cycles. The switching mode was changed with adjusting Ic but the transition was irreversible. Based on the results, switching mechanism based on filament theory is proposed to explain both resistive switching.

AB - This paper reports the coexistence of unipolar and bipolar resistive switching (BRS) in an Ag/ZnO/Pt structure fabricated by sputtering deposition at room temperature. The structure shows reproducible and stable unipolar resistive switching after electroforming with high compliance current (I c) =40 mA, regardless of the applied voltage polarity. With low Ic =5 mA at electroforming, BRS was also observed; this phenomenon depended on the voltage polarity. Both states were stable and reproducible over 100 cycles. The switching mode was changed with adjusting Ic but the transition was irreversible. Based on the results, switching mechanism based on filament theory is proposed to explain both resistive switching.

UR - https://www.scopus.com/pages/publications/77958180651

U2 - 10.1063/1.3489882

DO - 10.1063/1.3489882

M3 - Journal article

AN - SCOPUS:77958180651

SN - 0021-8979

VL - 108

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

M1 - 076101

ER -

Coexistence of unipolar and bipolar resistive switching characteristics in ZnO thin films

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