Coherent transverse-optical phonon generation induced by lattice defects in nitrogen-ion-implanted GaAs

J. S. Kim; H. C. Ryu; S. H. Kim; H. Kim; H. Rho; Y. J. Kim; Y. S. Lim; K. J. Yee

doi:10.1063/1.4826537

Coherent transverse-optical phonon generation induced by lattice defects in nitrogen-ion-implanted GaAs

J. S. Kim
, H. C. Ryu
, S. H. Kim
, H. Kim
, H. Rho
, Y. J. Kim
, Y. S. Lim
, K. J. Yee

Department of Physics

Chungnam National University
Sahmyook University
Jeonbuk National University
Korea Basic Science Institute
Konkuk University

Research output: Contribution to journal › Journal article › peer-review

1 Scopus citations

Abstract

We describe our observation of coherent phonon oscillations of X-point zone-boundary transverse-optical (TO) mode, TO(X), in nitrogen-ion-implanted GaAs that has been annealed at high temperatures. With the TO(X) mode being forbidden from the Raman selection rule in pure zinc-blende GaAs, the lattice defects have provided additional momentum for phonon generation. Annealing-induced structural modifications were demonstrated through X-ray diffraction, transmission electron microscopy, and Raman scattering measurements. The polarization dependence of the TO(X) mode was compared with that of the longitudinal optical mode, and the temperature dependence of the TO(X) phonon dephasing was also investigated.

Original language	English
Article number	171905
Journal	Applied Physics Letters
Volume	103
Issue number	17
DOIs	https://doi.org/10.1063/1.4826537
State	Published - 2013.10.21

Quacquarelli Symonds(QS) Subject Topics

Physics & Astronomy

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10.1063/1.4826537

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@article{cd1c9df0d4ba4ae3adec50cc1e28aa4c,

title = "Coherent transverse-optical phonon generation induced by lattice defects in nitrogen-ion-implanted GaAs",

abstract = "We describe our observation of coherent phonon oscillations of X-point zone-boundary transverse-optical (TO) mode, TO(X), in nitrogen-ion-implanted GaAs that has been annealed at high temperatures. With the TO(X) mode being forbidden from the Raman selection rule in pure zinc-blende GaAs, the lattice defects have provided additional momentum for phonon generation. Annealing-induced structural modifications were demonstrated through X-ray diffraction, transmission electron microscopy, and Raman scattering measurements. The polarization dependence of the TO(X) mode was compared with that of the longitudinal optical mode, and the temperature dependence of the TO(X) phonon dephasing was also investigated.",

author = "Kim, \{J. S.\} and Ryu, \{H. C.\} and Kim, \{S. H.\} and H. Kim and H. Rho and Kim, \{Y. J.\} and Lim, \{Y. S.\} and Yee, \{K. J.\}",

year = "2013",

month = oct,

day = "21",

doi = "10.1063/1.4826537",

language = "English",

volume = "103",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Coherent transverse-optical phonon generation induced by lattice defects in nitrogen-ion-implanted GaAs

AU - Kim, J. S.

AU - Ryu, H. C.

AU - Kim, S. H.

AU - Kim, H.

AU - Rho, H.

AU - Kim, Y. J.

AU - Lim, Y. S.

AU - Yee, K. J.

PY - 2013/10/21

Y1 - 2013/10/21

N2 - We describe our observation of coherent phonon oscillations of X-point zone-boundary transverse-optical (TO) mode, TO(X), in nitrogen-ion-implanted GaAs that has been annealed at high temperatures. With the TO(X) mode being forbidden from the Raman selection rule in pure zinc-blende GaAs, the lattice defects have provided additional momentum for phonon generation. Annealing-induced structural modifications were demonstrated through X-ray diffraction, transmission electron microscopy, and Raman scattering measurements. The polarization dependence of the TO(X) mode was compared with that of the longitudinal optical mode, and the temperature dependence of the TO(X) phonon dephasing was also investigated.

AB - We describe our observation of coherent phonon oscillations of X-point zone-boundary transverse-optical (TO) mode, TO(X), in nitrogen-ion-implanted GaAs that has been annealed at high temperatures. With the TO(X) mode being forbidden from the Raman selection rule in pure zinc-blende GaAs, the lattice defects have provided additional momentum for phonon generation. Annealing-induced structural modifications were demonstrated through X-ray diffraction, transmission electron microscopy, and Raman scattering measurements. The polarization dependence of the TO(X) mode was compared with that of the longitudinal optical mode, and the temperature dependence of the TO(X) phonon dephasing was also investigated.

UR - https://www.scopus.com/pages/publications/84887029312

U2 - 10.1063/1.4826537

DO - 10.1063/1.4826537

M3 - Journal article

AN - SCOPUS:84887029312

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 171905

ER -

Coherent transverse-optical phonon generation induced by lattice defects in nitrogen-ion-implanted GaAs

Abstract

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