Comparative analysis of characteristics of Si, Mg, and undoped GaN

We have grown undoped, Si- and Mg-doped GaN epilayers using metalorganic chemical vapor deposition. The grown samples have electron Hall mobilities (carrier concentrations) of 798 cm²/V s (7 × 10¹⁶ cm^-3) for undoped GaN and 287 cm²/V s (2.2 × 10¹⁸ cm^-3) for Si-doped GaN. Mg-doped GaN shows a high hole concentration of 8 × 10¹⁷ cm^-3 and a low resistivity of 0.8 Ω cm. When compared with undoped GaN, Si and Mg dopings increase the threading dislocation density in GaN films by one order and two orders, respectively. Besides, it was observed that the Mg doping causes an additional biaxial compressive stress of 0.095 GPa compared with both undoped and Si-doped GaN layer, which is due to the incorporation of large amount of Mg atoms (4-5 × 10¹⁹ cm^-3).