Comparison of high power semiconductor devices losses in 5MW PMSG MV wind turbines

Kihyun Lee; Kyungsub Jung; Yongsug Suh; Changwoo Kim; Hyoyol Yoo; Sunsoon Park

doi:10.1109/APEC.2014.6803657

Comparison of high power semiconductor devices losses in 5MW PMSG MV wind turbines

Kihyun Lee
, Kyungsub Jung
, Yongsug Suh
, Changwoo Kim
, Hyoyol Yoo
, Sunsoon Park

Department of Electrical Engineering

Research output: Contribution to conference › Conference paper › peer-review

16 Scopus citations

Abstract

This paper provides a comparison of high power semiconductor devices in 5MW-class Permanent Magnet Synchronous Generator (PMSG) Medium Voltage (MV) wind turbines. High power semiconductor devices of IGCT, module type IGBT, press-pack type IGBT, and press-pack type IEGT of both 4.5kV and 6.5kV are considered in this paper. Benchmarking is performed based on neutral point clamped 3-level back-to-back type voltage source converter supplied from grid voltage of 4160V. The feasible number of semiconductor devices in parallel is designed through the loss analysis considering both conduction and switching losses under the given operating conditions of 5MW-class PMSG wind turbines, particularly for the application in offshore wind farms. The loss analysis is confirmed through PLECS simulations. The comparison result shows that press-pack type IGBT and IGCT semiconductor device have the highest efficiency considering the snubber loss of IGCT.

Original language	English
Title of host publication	APEC 2014 - 29th Annual IEEE Applied Power Electronics Conference and Exposition
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2511-2518
Number of pages	8
ISBN (Print)	9781479923250
DOIs	https://doi.org/10.1109/APEC.2014.6803657
State	Published - 2014
Event	29th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2014 - Fort Worth, TX, United States Duration: 2014.03.16 → 2014.03.20

Publication series

Name	Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Conference

Conference	29th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2014
Country/Territory	United States
City	Fort Worth, TX
Period	14.03.16 → 14.03.20

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Quacquarelli Symonds(QS) Subject Topics

Engineering - Electrical & Electronic
Engineering - Petroleum

Access to Document

10.1109/APEC.2014.6803657

Cite this

Lee, K., Jung, K., Suh, Y., Kim, C., Yoo, H., & Park, S. (2014). Comparison of high power semiconductor devices losses in 5MW PMSG MV wind turbines. In APEC 2014 - 29th Annual IEEE Applied Power Electronics Conference and Exposition (pp. 2511-2518). Article 6803657 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APEC.2014.6803657

Lee, Kihyun ; Jung, Kyungsub ; Suh, Yongsug et al. / Comparison of high power semiconductor devices losses in 5MW PMSG MV wind turbines. APEC 2014 - 29th Annual IEEE Applied Power Electronics Conference and Exposition. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 2511-2518 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC).

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title = "Comparison of high power semiconductor devices losses in 5MW PMSG MV wind turbines",

abstract = "This paper provides a comparison of high power semiconductor devices in 5MW-class Permanent Magnet Synchronous Generator (PMSG) Medium Voltage (MV) wind turbines. High power semiconductor devices of IGCT, module type IGBT, press-pack type IGBT, and press-pack type IEGT of both 4.5kV and 6.5kV are considered in this paper. Benchmarking is performed based on neutral point clamped 3-level back-to-back type voltage source converter supplied from grid voltage of 4160V. The feasible number of semiconductor devices in parallel is designed through the loss analysis considering both conduction and switching losses under the given operating conditions of 5MW-class PMSG wind turbines, particularly for the application in offshore wind farms. The loss analysis is confirmed through PLECS simulations. The comparison result shows that press-pack type IGBT and IGCT semiconductor device have the highest efficiency considering the snubber loss of IGCT.",

author = "Kihyun Lee and Kyungsub Jung and Yongsug Suh and Changwoo Kim and Hyoyol Yoo and Sunsoon Park",

year = "2014",

doi = "10.1109/APEC.2014.6803657",

language = "English",

isbn = "9781479923250",

series = "Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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booktitle = "APEC 2014 - 29th Annual IEEE Applied Power Electronics Conference and Exposition",

note = "29th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2014 ; Conference date: 16-03-2014 Through 20-03-2014",

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Lee, K, Jung, K, Suh, Y, Kim, C, Yoo, H & Park, S 2014, Comparison of high power semiconductor devices losses in 5MW PMSG MV wind turbines. in APEC 2014 - 29th Annual IEEE Applied Power Electronics Conference and Exposition., 6803657, Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, Institute of Electrical and Electronics Engineers Inc., pp. 2511-2518, 29th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2014, Fort Worth, TX, United States, 14.03.16. https://doi.org/10.1109/APEC.2014.6803657

Comparison of high power semiconductor devices losses in 5MW PMSG MV wind turbines. / Lee, Kihyun; Jung, Kyungsub; Suh, Yongsug et al.
APEC 2014 - 29th Annual IEEE Applied Power Electronics Conference and Exposition. Institute of Electrical and Electronics Engineers Inc., 2014. p. 2511-2518 6803657 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC).

Research output: Contribution to conference › Conference paper › peer-review

TY - GEN

T1 - Comparison of high power semiconductor devices losses in 5MW PMSG MV wind turbines

AU - Lee, Kihyun

AU - Jung, Kyungsub

AU - Suh, Yongsug

AU - Kim, Changwoo

AU - Yoo, Hyoyol

AU - Park, Sunsoon

PY - 2014

Y1 - 2014

N2 - This paper provides a comparison of high power semiconductor devices in 5MW-class Permanent Magnet Synchronous Generator (PMSG) Medium Voltage (MV) wind turbines. High power semiconductor devices of IGCT, module type IGBT, press-pack type IGBT, and press-pack type IEGT of both 4.5kV and 6.5kV are considered in this paper. Benchmarking is performed based on neutral point clamped 3-level back-to-back type voltage source converter supplied from grid voltage of 4160V. The feasible number of semiconductor devices in parallel is designed through the loss analysis considering both conduction and switching losses under the given operating conditions of 5MW-class PMSG wind turbines, particularly for the application in offshore wind farms. The loss analysis is confirmed through PLECS simulations. The comparison result shows that press-pack type IGBT and IGCT semiconductor device have the highest efficiency considering the snubber loss of IGCT.

AB - This paper provides a comparison of high power semiconductor devices in 5MW-class Permanent Magnet Synchronous Generator (PMSG) Medium Voltage (MV) wind turbines. High power semiconductor devices of IGCT, module type IGBT, press-pack type IGBT, and press-pack type IEGT of both 4.5kV and 6.5kV are considered in this paper. Benchmarking is performed based on neutral point clamped 3-level back-to-back type voltage source converter supplied from grid voltage of 4160V. The feasible number of semiconductor devices in parallel is designed through the loss analysis considering both conduction and switching losses under the given operating conditions of 5MW-class PMSG wind turbines, particularly for the application in offshore wind farms. The loss analysis is confirmed through PLECS simulations. The comparison result shows that press-pack type IGBT and IGCT semiconductor device have the highest efficiency considering the snubber loss of IGCT.

UR - https://www.scopus.com/pages/publications/84900399507

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BT - APEC 2014 - 29th Annual IEEE Applied Power Electronics Conference and Exposition

PB - Institute of Electrical and Electronics Engineers Inc.

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ER -

Lee K, Jung K, Suh Y, Kim C, Yoo H, Park S. Comparison of high power semiconductor devices losses in 5MW PMSG MV wind turbines. In APEC 2014 - 29th Annual IEEE Applied Power Electronics Conference and Exposition. Institute of Electrical and Electronics Engineers Inc. 2014. p. 2511-2518. 6803657. (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC). doi: 10.1109/APEC.2014.6803657

Comparison of high power semiconductor devices losses in 5MW PMSG MV wind turbines

Abstract

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UN SDGs

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