Comprehensive Study on Trap-Induced Bias Instability via High-Pressure D2 and N2 Annealing

Ja Yun Ku; Khwang Sun Lee; Dae Han Jung; Dong Hyun Wang; Seyoung Oh; Kiyoung Lee; Byungjin Cho; Hagyoul Bae; Jun Young Park

doi:10.1109/TDMR.2023.3270920

Comprehensive Study on Trap-Induced Bias Instability via High-Pressure D₂ and N₂ Annealing

Ja Yun Ku
, Khwang Sun Lee
, Dae Han Jung
, Dong Hyun Wang
, Seyoung Oh
, Kiyoung Lee
, Byungjin Cho
, Hagyoul Bae^*
, Jun Young Park^*

^*Corresponding author for this work

Division of Electronic Engineering

Chungbuk National University
Hongik University

Research output: Contribution to journal › Journal article › peer-review

7 Scopus citations

Abstract

Forming gas annealing (FGA) in a deuterium (D₂) ambient is crucial importance to MOSFET fabrication technologies related to alleviation of trap state at Si/SiO₂ interface as well as oxide bulk by D₂ passivation. In this study, post-metal annealing (PMA) process with D₂ and N₂ gases under a high-pressure condition was conducted to verify performance enhancement in gate-enclosed FETs. We explored the trap behaviors inside the bandgap of Si and SiO₂ by quantitatively using capacitance–voltage (C–V) characteristics. Furthermore, the change of deuterium and nitrogen ions in Si/SiO₂ gate stack before and after the PMA process was directly investigated by time-of-flight secondary ion mass spectroscopy (ToF-SIMS) depthprofiling technique.

Original language	English
Pages (from-to)	276-280
Number of pages	5
Journal	IEEE Transactions on Device and Materials Reliability
Volume	23
Issue number	2
DOIs	https://doi.org/10.1109/TDMR.2023.3270920
State	Published - 2023.06

Keywords

annealing
Deuterium
hot-carrier injection (HCI)
interface trap
nitrogen

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Electrical & Electronic
Engineering - Petroleum

Access to Document

10.1109/TDMR.2023.3270920

Cite this

@article{8a97bb1313a24e3390cbb0d60b8afec1,

title = "Comprehensive Study on Trap-Induced Bias Instability via High-Pressure D2 and N2 Annealing",

abstract = "Forming gas annealing (FGA) in a deuterium (D2) ambient is crucial importance to MOSFET fabrication technologies related to alleviation of trap state at Si/SiO2 interface as well as oxide bulk by D2 passivation. In this study, post-metal annealing (PMA) process with D2 and N2 gases under a high-pressure condition was conducted to verify performance enhancement in gate-enclosed FETs. We explored the trap behaviors inside the bandgap of Si and SiO2 by quantitatively using capacitance–voltage (C–V) characteristics. Furthermore, the change of deuterium and nitrogen ions in Si/SiO2 gate stack before and after the PMA process was directly investigated by time-of-flight secondary ion mass spectroscopy (ToF-SIMS) depthprofiling technique.",

keywords = "annealing, Deuterium, hot-carrier injection (HCI), interface trap, nitrogen",

author = "Ku, \{Ja Yun\} and Lee, \{Khwang Sun\} and Jung, \{Dae Han\} and Wang, \{Dong Hyun\} and Seyoung Oh and Kiyoung Lee and Byungjin Cho and Hagyoul Bae and Park, \{Jun Young\}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.",

year = "2023",

month = jun,

doi = "10.1109/TDMR.2023.3270920",

language = "English",

volume = "23",

pages = "276--280",

journal = "IEEE Transactions on Device and Materials Reliability",

issn = "1530-4388",

number = "2",

}

TY - JOUR

T1 - Comprehensive Study on Trap-Induced Bias Instability via High-Pressure D2 and N2 Annealing

AU - Ku, Ja Yun

AU - Lee, Khwang Sun

AU - Jung, Dae Han

AU - Wang, Dong Hyun

AU - Oh, Seyoung

AU - Lee, Kiyoung

AU - Cho, Byungjin

AU - Bae, Hagyoul

AU - Park, Jun Young

PY - 2023/6

Y1 - 2023/6

N2 - Forming gas annealing (FGA) in a deuterium (D2) ambient is crucial importance to MOSFET fabrication technologies related to alleviation of trap state at Si/SiO2 interface as well as oxide bulk by D2 passivation. In this study, post-metal annealing (PMA) process with D2 and N2 gases under a high-pressure condition was conducted to verify performance enhancement in gate-enclosed FETs. We explored the trap behaviors inside the bandgap of Si and SiO2 by quantitatively using capacitance–voltage (C–V) characteristics. Furthermore, the change of deuterium and nitrogen ions in Si/SiO2 gate stack before and after the PMA process was directly investigated by time-of-flight secondary ion mass spectroscopy (ToF-SIMS) depthprofiling technique.

AB - Forming gas annealing (FGA) in a deuterium (D2) ambient is crucial importance to MOSFET fabrication technologies related to alleviation of trap state at Si/SiO2 interface as well as oxide bulk by D2 passivation. In this study, post-metal annealing (PMA) process with D2 and N2 gases under a high-pressure condition was conducted to verify performance enhancement in gate-enclosed FETs. We explored the trap behaviors inside the bandgap of Si and SiO2 by quantitatively using capacitance–voltage (C–V) characteristics. Furthermore, the change of deuterium and nitrogen ions in Si/SiO2 gate stack before and after the PMA process was directly investigated by time-of-flight secondary ion mass spectroscopy (ToF-SIMS) depthprofiling technique.

KW - annealing

KW - Deuterium

KW - hot-carrier injection (HCI)

KW - interface trap

KW - nitrogen

UR - https://www.scopus.com/pages/publications/85159725688

U2 - 10.1109/TDMR.2023.3270920

DO - 10.1109/TDMR.2023.3270920

M3 - Journal article

AN - SCOPUS:85159725688

SN - 1530-4388

VL - 23

SP - 276

EP - 280

JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

IS - 2

ER -