Conduction mechanism of Se schottky contact to n-type Ge

The conduction mechanism of Se/n-type-Ge Schottky diodes is investigated using temperature-dependent current-voltage (I-V) characteristics. The presence of microscopic inhomogeneity at the Se/Ge interface could be the primary cause of the differences between the barrier heights measured from the I-V and capacitance-voltage (C-V ) characteristics. The position of the quasi-Fermi level suggested the dominance of thermionic emission in the forward bias region. The electric field dependence of the reverse current revealed that Schottky emission, along with the generation mechanism, has dominance over the current conduction in the reverse bias region.