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Construction of flexible transistors enabled by transfer printing

  • Han Eol Lee*
  • *Corresponding author for this work

Research output: Contribution to conferenceChapterpeer-review

Abstract

In upcoming the internet of things (IoT) era, a concept of a form-factor has become significant in the electronics field, resulting in the form-factor innovation for improving device flexibility beyond the obstacle of rigid substrates. Among various electronic devices with flexible forms, transistors using inorganic materials have been spotlighted due to their high-performances, excellent stabilities and long lifespan. For realizing high-performance and flexible inorganic transistors, which were fabricated by high-temperature thermal annealing processes, a transfer printing technique has been proposed. In this chapter, novel advances in transistor transfer techniques are introduced in respect of materials, new printing methods, and applications.

Original languageEnglish
Title of host publicationTransfer Printing Technologies and Applications
PublisherElsevier
Pages235-277
Number of pages43
ISBN (Electronic)9780443188459
ISBN (Print)9780443188442
DOIs
StatePublished - 2024.01.1

Keywords

  • device transfer techniques
  • flexible transistors
  • thin-film device

Quacquarelli Symonds(QS) Subject Topics

  • Physics & Astronomy

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