Control of Optical and Electrical Characteristics of BaxSn1-xO2-x Films with Bandgap Engineering as a Function of Ba:Sn Ratio

Zheyu Zhang; Tahmineh Mahmoudi; Yeon Ho Im; Yoon Bong Hahn

doi:10.1021/acsaelm.3c00307

Control of Optical and Electrical Characteristics of Ba_xSn_1-xO_2-x Films with Bandgap Engineering as a Function of Ba:Sn Ratio

Zheyu Zhang
, Tahmineh Mahmoudi
, Yeon Ho Im^*
, Yoon Bong Hahn^*

^*Corresponding author for this work

Division of Chemical Engineering

Jeonbuk National University

Research output: Contribution to journal › Journal article › peer-review

3 Scopus citations

Abstract

Herein, we report bandgap engineering of alloyed Ba_xSn_1-xO_2-x (BSO) to modulate the optical and electrical properties as a function of Ba:Sn ratio. The BSO nanoparticles were synthesized at 50 °C and annealed at 200 °C. It was found that the bandgap and electron mobility of BSO films decrease with increasing the Ba content in BSO, indicating that the electron mobility of the BSO-based electron transport layers in optoelectronic devices can be easily controlled by adjusting the Ba:Sn ratio. The bandgap and electron mobility of BSO films ranged from 3.02 to 3.71 eV and from 5.2 × 10^-3 to 9.8 × 10^-3 cm²/V, respectively.

Original language	English
Pages (from-to)	2970-2976
Number of pages	7
Journal	ACS Applied Electronic Materials
Volume	5
Issue number	6
DOIs	https://doi.org/10.1021/acsaelm.3c00307
State	Published - 2023.06.27

Keywords

Alloyed BaSnO
Bandgap energy
Electron mobility
Electron-transport material, Bandgap engineering

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Chemistry

Access to Document

10.1021/acsaelm.3c00307

Cite this

@article{07c32eb863e7401d848f799454a70068,

title = "Control of Optical and Electrical Characteristics of BaxSn1-xO2-x Films with Bandgap Engineering as a Function of Ba:Sn Ratio",

abstract = "Herein, we report bandgap engineering of alloyed BaxSn1-xO2-x (BSO) to modulate the optical and electrical properties as a function of Ba:Sn ratio. The BSO nanoparticles were synthesized at 50 °C and annealed at 200 °C. It was found that the bandgap and electron mobility of BSO films decrease with increasing the Ba content in BSO, indicating that the electron mobility of the BSO-based electron transport layers in optoelectronic devices can be easily controlled by adjusting the Ba:Sn ratio. The bandgap and electron mobility of BSO films ranged from 3.02 to 3.71 eV and from 5.2 × 10-3 to 9.8 × 10-3 cm2/V, respectively.",

keywords = "Alloyed BaSnO, Bandgap energy, Electron mobility, Electron-transport material, Bandgap engineering",

author = "Zheyu Zhang and Tahmineh Mahmoudi and Im, \{Yeon Ho\} and Hahn, \{Yoon Bong\}",

note = "Publisher Copyright: {\textcopyright} 2023 American Chemical Society",

year = "2023",

month = jun,

day = "27",

doi = "10.1021/acsaelm.3c00307",

language = "English",

volume = "5",

pages = "2970--2976",

journal = "ACS Applied Electronic Materials",

issn = "2637-6113",

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T1 - Control of Optical and Electrical Characteristics of BaxSn1-xO2-x Films with Bandgap Engineering as a Function of Ba:Sn Ratio

AU - Zhang, Zheyu

AU - Mahmoudi, Tahmineh

AU - Im, Yeon Ho

AU - Hahn, Yoon Bong

PY - 2023/6/27

Y1 - 2023/6/27

N2 - Herein, we report bandgap engineering of alloyed BaxSn1-xO2-x (BSO) to modulate the optical and electrical properties as a function of Ba:Sn ratio. The BSO nanoparticles were synthesized at 50 °C and annealed at 200 °C. It was found that the bandgap and electron mobility of BSO films decrease with increasing the Ba content in BSO, indicating that the electron mobility of the BSO-based electron transport layers in optoelectronic devices can be easily controlled by adjusting the Ba:Sn ratio. The bandgap and electron mobility of BSO films ranged from 3.02 to 3.71 eV and from 5.2 × 10-3 to 9.8 × 10-3 cm2/V, respectively.

AB - Herein, we report bandgap engineering of alloyed BaxSn1-xO2-x (BSO) to modulate the optical and electrical properties as a function of Ba:Sn ratio. The BSO nanoparticles were synthesized at 50 °C and annealed at 200 °C. It was found that the bandgap and electron mobility of BSO films decrease with increasing the Ba content in BSO, indicating that the electron mobility of the BSO-based electron transport layers in optoelectronic devices can be easily controlled by adjusting the Ba:Sn ratio. The bandgap and electron mobility of BSO films ranged from 3.02 to 3.71 eV and from 5.2 × 10-3 to 9.8 × 10-3 cm2/V, respectively.

KW - Alloyed BaSnO

KW - Bandgap energy

KW - Electron mobility

KW - Electron-transport material, Bandgap engineering

UR - https://www.scopus.com/pages/publications/85163320848

U2 - 10.1021/acsaelm.3c00307

DO - 10.1021/acsaelm.3c00307

M3 - Journal article

AN - SCOPUS:85163320848

SN - 2637-6113

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