Control of quantum-confined stark effect in InGaN-based quantum wells

Jae Hyun Ryou; P. Douglas Yoder; Jianping Liu; Zachary Lochner; Hyunsoo S. Kim; Suk Choi; Hee Jin Kim; Russell D. Dupuis

doi:10.1109/JSTQE.2009.2014170

Control of quantum-confined stark effect in InGaN-based quantum wells

Jae Hyun Ryou^*
, P. Douglas Yoder
, Jianping Liu
, Zachary Lochner
, Hyunsoo S. Kim
, Suk Choi
, Hee Jin Kim
, Russell D. Dupuis

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Georgia Institute of Technology

Research output: Contribution to journal › Journal article › peer-review

263 Scopus citations

Abstract

This paper reviews current technological developments in polarization engineering and the control of the quantum-confined Stark effect (QCSE) for In_xGa_1-xN-based quantum-well active regions, which are generally employed in visible LEDs for solid-state lighting applications. First, the origin of the QCSE in III-N wurtzite semiconductors is introduced, and polarization-induced internal fields are discussed in order to provide contextual background. Next, the optical and electrical properties of In _xGa_1-xN-based quantum wells that are affected by the QCSE are described. Finally, several methods for controlling the QCSE of In _xGa_1-xN-based quantum wells are discussed in the context of performance metrics of visible light emitters, considering both pros and cons. These strategies include doping control, strain/polarization field/electronic band structure control, growth direction control, and crystalline structure control.

Original language	English
Article number	4967936
Pages (from-to)	1080-1091
Number of pages	12
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	15
Issue number	4
DOIs	https://doi.org/10.1109/JSTQE.2009.2014170
State	Published - 2009

Keywords

Epitaxial growth
LEDs
Piezoelectricity
Quantum wells
Quantum-confined Stark effect (QCSE)
Semiconductor lasers

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10.1109/JSTQE.2009.2014170

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@article{387297551e1744859cd1de577eb4f38d,

title = "Control of quantum-confined stark effect in InGaN-based quantum wells",

abstract = "This paper reviews current technological developments in polarization engineering and the control of the quantum-confined Stark effect (QCSE) for InxGa1-xN-based quantum-well active regions, which are generally employed in visible LEDs for solid-state lighting applications. First, the origin of the QCSE in III-N wurtzite semiconductors is introduced, and polarization-induced internal fields are discussed in order to provide contextual background. Next, the optical and electrical properties of In xGa1-xN-based quantum wells that are affected by the QCSE are described. Finally, several methods for controlling the QCSE of In xGa1-xN-based quantum wells are discussed in the context of performance metrics of visible light emitters, considering both pros and cons. These strategies include doping control, strain/polarization field/electronic band structure control, growth direction control, and crystalline structure control.",

keywords = "Epitaxial growth, LEDs, Piezoelectricity, Quantum wells, Quantum-confined Stark effect (QCSE), Semiconductor lasers",

author = "Ryou, \{Jae Hyun\} and Yoder, \{P. Douglas\} and Jianping Liu and Zachary Lochner and Kim, \{Hyunsoo S.\} and Suk Choi and Kim, \{Hee Jin\} and Dupuis, \{Russell D.\}",

year = "2009",

doi = "10.1109/JSTQE.2009.2014170",

language = "English",

volume = "15",

pages = "1080--1091",

journal = "IEEE Journal on Selected Topics in Quantum Electronics",

issn = "1077-260X",

number = "4",

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TY - JOUR

T1 - Control of quantum-confined stark effect in InGaN-based quantum wells

AU - Ryou, Jae Hyun

AU - Yoder, P. Douglas

AU - Liu, Jianping

AU - Lochner, Zachary

AU - Kim, Hyunsoo S.

AU - Choi, Suk

AU - Kim, Hee Jin

AU - Dupuis, Russell D.

PY - 2009

Y1 - 2009

N2 - This paper reviews current technological developments in polarization engineering and the control of the quantum-confined Stark effect (QCSE) for InxGa1-xN-based quantum-well active regions, which are generally employed in visible LEDs for solid-state lighting applications. First, the origin of the QCSE in III-N wurtzite semiconductors is introduced, and polarization-induced internal fields are discussed in order to provide contextual background. Next, the optical and electrical properties of In xGa1-xN-based quantum wells that are affected by the QCSE are described. Finally, several methods for controlling the QCSE of In xGa1-xN-based quantum wells are discussed in the context of performance metrics of visible light emitters, considering both pros and cons. These strategies include doping control, strain/polarization field/electronic band structure control, growth direction control, and crystalline structure control.

AB - This paper reviews current technological developments in polarization engineering and the control of the quantum-confined Stark effect (QCSE) for InxGa1-xN-based quantum-well active regions, which are generally employed in visible LEDs for solid-state lighting applications. First, the origin of the QCSE in III-N wurtzite semiconductors is introduced, and polarization-induced internal fields are discussed in order to provide contextual background. Next, the optical and electrical properties of In xGa1-xN-based quantum wells that are affected by the QCSE are described. Finally, several methods for controlling the QCSE of In xGa1-xN-based quantum wells are discussed in the context of performance metrics of visible light emitters, considering both pros and cons. These strategies include doping control, strain/polarization field/electronic band structure control, growth direction control, and crystalline structure control.

KW - Epitaxial growth

KW - LEDs

KW - Piezoelectricity

KW - Quantum wells

KW - Quantum-confined Stark effect (QCSE)

KW - Semiconductor lasers

UR - https://www.scopus.com/pages/publications/70349316517

U2 - 10.1109/JSTQE.2009.2014170

DO - 10.1109/JSTQE.2009.2014170

M3 - Journal article

AN - SCOPUS:70349316517

SN - 1077-260X

VL - 15

SP - 1080

EP - 1091

JO - IEEE Journal on Selected Topics in Quantum Electronics

JF - IEEE Journal on Selected Topics in Quantum Electronics

IS - 4

M1 - 4967936

ER -

Control of quantum-confined stark effect in InGaN-based quantum wells

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Keywords

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