Control of reverse twist domain near a pixel edge using strong vertical electric field in the fringe-field switching liquid crystal device

In the fringe-field switching (FFS) liquid crystal (LC) device, competition between two opposite forces to twist LCs exists near the pixel edge. The authors proposed an advanced FFS structure with the strong vertical field near the pixel edge which was induced between Cr black matrix (BM) and pixel electrode due to electrical connection between the Cr BM and the common electrode. The vertical field induces a tilt angle of LCs which increases with increasing field intensity. As a result, the degree of twist in the reverse direction decreases with increasing the pixel voltage, and thus voltage-dependent LC dynamics becomes very stable even at high applied voltages.