Control of silicidation in HfO2/Si(100) interfaces

Deok Yong Cho; Kee Shik Park; B. H. Choi; S. J. Oh; Y. J. Chang; D. H. Kim; T. W. Noh; Ranju Jung; Jae Cheol Lee; S. D. Bu

doi:10.1063/1.1856140

Control of silicidation in HfO₂/Si(100) interfaces

Deok Yong Cho
, Kee Shik Park
, B. H. Choi
, S. J. Oh^*
, Y. J. Chang
, D. H. Kim
, T. W. Noh
, Ranju Jung
, Jae Cheol Lee
, S. D. Bu

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

46 Scopus citations

Abstract

The interfacial states of the HfO₂ thin film grown on the Si(100) substrate by the pulsed laser deposition method is investigated in situ using x-ray photoelectron spectroscopy. They are found to depend on the HfO ₂ film thickness, oxygen pressure during the pulsed laser deposition growth, and the deposition process. The hafnium suicide is formed in an oxygen-deficient condition, and it can be most effectively controlled by the ambient oxygen pressure during film growth. The close relation between the silicide formation and abundance of the silicon suboxides at the interface is presented.

Original language	English
Article number	041913
Pages (from-to)	041913-1-041913-3
Journal	Applied Physics Letters
Volume	86
Issue number	4
DOIs	https://doi.org/10.1063/1.1856140
State	Published - 2005

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Quacquarelli Symonds(QS) Subject Topics

Physics & Astronomy

Access to Document

10.1063/1.1856140

Cite this

@article{5def7d15771c415c8818d4d3232ddf2c,

title = "Control of silicidation in HfO2/Si(100) interfaces",

abstract = "The interfacial states of the HfO2 thin film grown on the Si(100) substrate by the pulsed laser deposition method is investigated in situ using x-ray photoelectron spectroscopy. They are found to depend on the HfO 2 film thickness, oxygen pressure during the pulsed laser deposition growth, and the deposition process. The hafnium suicide is formed in an oxygen-deficient condition, and it can be most effectively controlled by the ambient oxygen pressure during film growth. The close relation between the silicide formation and abundance of the silicon suboxides at the interface is presented.",

author = "Cho, \{Deok Yong\} and Park, \{Kee Shik\} and Choi, \{B. H.\} and Oh, \{S. J.\} and Chang, \{Y. J.\} and Kim, \{D. H.\} and Noh, \{T. W.\} and Ranju Jung and Lee, \{Jae Cheol\} and Bu, \{S. D.\}",

year = "2005",

doi = "10.1063/1.1856140",

language = "English",

volume = "86",

pages = "041913--1--041913--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "4",

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TY - JOUR

T1 - Control of silicidation in HfO2/Si(100) interfaces

AU - Cho, Deok Yong

AU - Park, Kee Shik

AU - Choi, B. H.

AU - Oh, S. J.

AU - Chang, Y. J.

AU - Kim, D. H.

AU - Noh, T. W.

AU - Jung, Ranju

AU - Lee, Jae Cheol

AU - Bu, S. D.

PY - 2005

Y1 - 2005

N2 - The interfacial states of the HfO2 thin film grown on the Si(100) substrate by the pulsed laser deposition method is investigated in situ using x-ray photoelectron spectroscopy. They are found to depend on the HfO 2 film thickness, oxygen pressure during the pulsed laser deposition growth, and the deposition process. The hafnium suicide is formed in an oxygen-deficient condition, and it can be most effectively controlled by the ambient oxygen pressure during film growth. The close relation between the silicide formation and abundance of the silicon suboxides at the interface is presented.

AB - The interfacial states of the HfO2 thin film grown on the Si(100) substrate by the pulsed laser deposition method is investigated in situ using x-ray photoelectron spectroscopy. They are found to depend on the HfO 2 film thickness, oxygen pressure during the pulsed laser deposition growth, and the deposition process. The hafnium suicide is formed in an oxygen-deficient condition, and it can be most effectively controlled by the ambient oxygen pressure during film growth. The close relation between the silicide formation and abundance of the silicon suboxides at the interface is presented.

UR - https://www.scopus.com/pages/publications/13644273772

U2 - 10.1063/1.1856140

DO - 10.1063/1.1856140

M3 - Journal article

AN - SCOPUS:13644273772

SN - 0003-6951

VL - 86

SP - 041913-1-041913-3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 041913

ER -