Controlled doping of graphene using ZnO substrates

Misuk Si; Won Jin Choi; Yoon Jang Jeong; Young Kuk Lee; Ju Jin Kim; Jeong O. Lee

doi:10.1016/j.physe.2016.01.035

Controlled doping of graphene using ZnO substrates

Misuk Si
, Won Jin Choi
, Yoon Jang Jeong
, Young Kuk Lee
, Ju Jin Kim^*
, Jeong O. Lee

^*Corresponding author for this work

Department of Physics

Jeonbuk National University
Korea Research Institute of Chemical Technology

Research output: Contribution to journal › Journal article › peer-review

3 Scopus citations

Abstract

We show that graphene device could be controllably doped by the bottom substrate by inserting atomic layer deposition grown ZnO between graphene and SiO₂ substrate. To clarify the effect of bottom ZnO, length of the graphene transistor channel was varied from 20 to 200 μm, while that of ZnO was fixed to 10 μm. Graphene devices supported on ZnO film show marked difference from those supported on SiO₂ substrates; bottom ZnO layer behave as an electron donor. UV illumination experiment on hybrid graphene-ZnO device reveals that the effect of doping from ZnO becomes negligible when the graphene channel length made about four times larger than that of ZnO stripe.

Original language	English
Pages (from-to)	115-119
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	80
DOIs	https://doi.org/10.1016/j.physe.2016.01.035
State	Published - 2016.06.1

Keywords

Doping
Graphene
ZnO films

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Physics & Astronomy

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10.1016/j.physe.2016.01.035

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title = "Controlled doping of graphene using ZnO substrates",

abstract = "We show that graphene device could be controllably doped by the bottom substrate by inserting atomic layer deposition grown ZnO between graphene and SiO2 substrate. To clarify the effect of bottom ZnO, length of the graphene transistor channel was varied from 20 to 200 μm, while that of ZnO was fixed to 10 μm. Graphene devices supported on ZnO film show marked difference from those supported on SiO2 substrates; bottom ZnO layer behave as an electron donor. UV illumination experiment on hybrid graphene-ZnO device reveals that the effect of doping from ZnO becomes negligible when the graphene channel length made about four times larger than that of ZnO stripe.",

keywords = "Doping, Graphene, ZnO films",

author = "Misuk Si and Choi, \{Won Jin\} and Jeong, \{Yoon Jang\} and Lee, \{Young Kuk\} and Kim, \{Ju Jin\} and Lee, \{Jeong O.\}",

year = "2016",

month = jun,

day = "1",

doi = "10.1016/j.physe.2016.01.035",

language = "English",

volume = "80",

pages = "115--119",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

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TY - JOUR

T1 - Controlled doping of graphene using ZnO substrates

AU - Si, Misuk

AU - Choi, Won Jin

AU - Jeong, Yoon Jang

AU - Lee, Young Kuk

AU - Kim, Ju Jin

AU - Lee, Jeong O.

PY - 2016/6/1

Y1 - 2016/6/1

N2 - We show that graphene device could be controllably doped by the bottom substrate by inserting atomic layer deposition grown ZnO between graphene and SiO2 substrate. To clarify the effect of bottom ZnO, length of the graphene transistor channel was varied from 20 to 200 μm, while that of ZnO was fixed to 10 μm. Graphene devices supported on ZnO film show marked difference from those supported on SiO2 substrates; bottom ZnO layer behave as an electron donor. UV illumination experiment on hybrid graphene-ZnO device reveals that the effect of doping from ZnO becomes negligible when the graphene channel length made about four times larger than that of ZnO stripe.

AB - We show that graphene device could be controllably doped by the bottom substrate by inserting atomic layer deposition grown ZnO between graphene and SiO2 substrate. To clarify the effect of bottom ZnO, length of the graphene transistor channel was varied from 20 to 200 μm, while that of ZnO was fixed to 10 μm. Graphene devices supported on ZnO film show marked difference from those supported on SiO2 substrates; bottom ZnO layer behave as an electron donor. UV illumination experiment on hybrid graphene-ZnO device reveals that the effect of doping from ZnO becomes negligible when the graphene channel length made about four times larger than that of ZnO stripe.

KW - Doping

KW - Graphene

KW - ZnO films

UR - https://www.scopus.com/pages/publications/84957021241

U2 - 10.1016/j.physe.2016.01.035

DO - 10.1016/j.physe.2016.01.035

M3 - Journal article

AN - SCOPUS:84957021241

SN - 1386-9477

VL - 80

SP - 115

EP - 119

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

ER -

Controlled doping of graphene using ZnO substrates

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

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