Correlations of a High-temperature AlN Buffer Layer and Al-Preseeding with the Structural and the Optical Properties of GaN on a Si(111) Substrate

Chel-Jong Choi

Correlations of a High-temperature AlN Buffer Layer and Al-Preseeding with the Structural and the Optical Properties of GaN on a Si(111) Substrate

Chel-Jong Choi

Department of Semiconductor Science and Technology

Research output: Contribution to journal › Journal article › peer-review

Original language	Korean
Journal	Journal of the Korean Physical Society
State	Published - 2011.05.13

Cite this

@article{435d0df81ecc425fbe1af54c6bbb3ac7,

title = "Correlations of a High-temperature AlN Buffer Layer and Al-Preseeding with the Structural and the Optical Properties of GaN on a Si(111) Substrate",

author = "Chel-Jong Choi",

year = "2011",

month = may,

day = "13",

language = "Korean",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

}