Skip to main navigation Skip to search Skip to main content

Creation and annihilation of single atom vacancy during subsurface diffusion

  • Junghun Choi
  • , Do Kyung Lim
  • , Youngwoo Kim
  • , Do Hwan Kim
  • , Sehun Kim
  • Korea Advanced Institute of Science and Technology
  • Daegu University

Research output: Contribution to journalJournal articlepeer-review

Abstract

Initial reaction of Co with Ge(100) substrate was investigated using scanning tunneling microscopy (STM) in conjunction with density-functional theory (DFT) calculations. We observed that the subsurface Co atoms diffuse after the migration of a Ge atom to the metastable M site. The STM imaging in real time revealed that Ge atom vacancy was created and annihilated during the subsurface diffusion of Co atom along the Ge dimer row. Theoretical calculations confirmed that the migration of Ge atom facilitated the fast diffusion of subsurface Co atom.

Original languageEnglish
Article number201305
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume82
Issue number20
DOIs
StatePublished - 2010.11.9

Fingerprint

Dive into the research topics of 'Creation and annihilation of single atom vacancy during subsurface diffusion'. Together they form a unique fingerprint.

Cite this