Current annealing to improve drain output performance of β-Ga₂O₃ field-effect transistor

Current annealing, which utilizes high level of drain current during device fabrication, is proposed. A semiconductor device β-Ga₂O₃ field-effect transistor is preferred as test vehicle because of its inherently high drain current. With just a few seconds of current annealing, drain output performance can be boosted more than 50% without adding other processes. Both electrical measurements and numerical simulations are performed to investigate the annealing behavior. Especially, proposed substrate engineering to promote thermal isolation enables better power consumption during current annealing.