Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions

Bhishma Pandit; Tae Hoon Seo; Beo Deul Ryu; Jaehee Cho

doi:10.1063/1.4953917

Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions

Bhishma Pandit
, Tae Hoon Seo
, Beo Deul Ryu
, Jaehee Cho

Department of Semiconductor Science and Technology

Jeonbuk National University
Korea Institute of Science and Technology

Research output: Contribution to journal › Journal article › peer-review

18 Scopus citations

Abstract

The current transport mechanism of graphene formed on Al_xGa_1-xN/GaN heterostructures with various Al mole fractions (x = 0.15, 0.20, 0.30, and 0.40) is investigated. The current-voltage measurement from graphene to AlGaN/GaN shows an excellent rectifying property. The extracted Schottky barrier height of the graphene/AlGaN/GaN contacts increases with the Al mole fraction in AlGaN. However, the current transport mechanism deviates from the Schottky-Mott theory owing to the deterioration of AlGaN crystal quality at high Al mole fractions confirmed by reverse leakage current measurement.

Original language	English
Article number	065007
Journal	APL Materials
Volume	6
Issue number	6
DOIs	https://doi.org/10.1063/1.4953917
State	Published - 2016.06.9

Quacquarelli Symonds(QS) Subject Topics

Materials Science

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10.1063/1.4953917

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@article{0daf0782a640474e96f58236d1853dce,

title = "Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions",

abstract = "The current transport mechanism of graphene formed on AlxGa1-xN/GaN heterostructures with various Al mole fractions (x = 0.15, 0.20, 0.30, and 0.40) is investigated. The current-voltage measurement from graphene to AlGaN/GaN shows an excellent rectifying property. The extracted Schottky barrier height of the graphene/AlGaN/GaN contacts increases with the Al mole fraction in AlGaN. However, the current transport mechanism deviates from the Schottky-Mott theory owing to the deterioration of AlGaN crystal quality at high Al mole fractions confirmed by reverse leakage current measurement.",

author = "Bhishma Pandit and Seo, \{Tae Hoon\} and Ryu, \{Beo Deul\} and Jaehee Cho",

note = "Publisher Copyright: {\textcopyright} 2016 Author(s).",

year = "2016",

month = jun,

day = "9",

doi = "10.1063/1.4953917",

language = "English",

volume = "6",

journal = "APL Materials",

issn = "2166-532X",

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T1 - Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions

AU - Pandit, Bhishma

AU - Seo, Tae Hoon

AU - Ryu, Beo Deul

AU - Cho, Jaehee

PY - 2016/6/9

Y1 - 2016/6/9

N2 - The current transport mechanism of graphene formed on AlxGa1-xN/GaN heterostructures with various Al mole fractions (x = 0.15, 0.20, 0.30, and 0.40) is investigated. The current-voltage measurement from graphene to AlGaN/GaN shows an excellent rectifying property. The extracted Schottky barrier height of the graphene/AlGaN/GaN contacts increases with the Al mole fraction in AlGaN. However, the current transport mechanism deviates from the Schottky-Mott theory owing to the deterioration of AlGaN crystal quality at high Al mole fractions confirmed by reverse leakage current measurement.

AB - The current transport mechanism of graphene formed on AlxGa1-xN/GaN heterostructures with various Al mole fractions (x = 0.15, 0.20, 0.30, and 0.40) is investigated. The current-voltage measurement from graphene to AlGaN/GaN shows an excellent rectifying property. The extracted Schottky barrier height of the graphene/AlGaN/GaN contacts increases with the Al mole fraction in AlGaN. However, the current transport mechanism deviates from the Schottky-Mott theory owing to the deterioration of AlGaN crystal quality at high Al mole fractions confirmed by reverse leakage current measurement.

UR - https://www.scopus.com/pages/publications/84973924409

U2 - 10.1063/1.4953917

DO - 10.1063/1.4953917

M3 - Journal article

AN - SCOPUS:84973924409

SN - 2166-532X

VL - 6

JO - APL Materials

JF - APL Materials

IS - 6

M1 - 065007

ER -

Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions

Abstract

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