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Current-voltage, S-parameter, LFN properties in T-R-T Type ESD/EMI filters with TVS zener diodes developed using epitaxy-based IPD technology

  • Woong Ki Hong*
  • , Daoheung Bouangeune
  • , Yeon Ho Kil
  • , Hyun Duk Yang
  • , Sang Sik Choi
  • , Deok Ho Cho
  • , Chel Jong Choi
  • , Kyu Hwan Shim
  • *Corresponding author for this work
  • Jeonbuk National University
  • Sigetronics, Inc.

Research output: Contribution to conferenceConference paperpeer-review

Abstract

We have developed the T-R-T type ESD/EMI filter using new transient voltage suppressor TVS Zener diodes and the epitaxy-based IPD technology. The performance of the filter has been examined in terms of I-V, s-parameter, and LFN properties. The properties demonstrated that the filter kept consistency in the excellent ESD robustness over the MM ±4 kV.

Original languageEnglish
Title of host publicationElectrical Overstress/Electrostatic Discharge Symposium Proceedings 2012, EOS/ESD 2012
StatePublished - 2012
Event34th International Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2012 - Tucson, AZ, United States
Duration: 2012.09.92012.09.14

Publication series

NameElectrical Overstress/Electrostatic Discharge Symposium Proceedings
ISSN (Print)0739-5159

Conference

Conference34th International Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2012
Country/TerritoryUnited States
CityTucson, AZ
Period12.09.912.09.14

Quacquarelli Symonds(QS) Subject Topics

  • Engineering - Electrical & Electronic
  • Engineering - Petroleum

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