DC and RF characteristics of RPCVD grown modulation doped Si 0.8Ge0.2 pMOSFETs

Young Joo Song; Sang Hoon Kim; Sang Heung Lee; Hyun Chul Bae; Jin Young Kang; Kyu Hwan Shim; Joeng Hoon Kim; Jong In Song

doi:10.1016/S0038-1101(03)00317-4

DC and RF characteristics of RPCVD grown modulation doped Si _0.8Ge_0.2 pMOSFETs

Young Joo Song^*
, Sang Hoon Kim
, Sang Heung Lee
, Hyun Chul Bae
, Jin Young Kang
, Kyu Hwan Shim
, Joeng Hoon Kim
, Jong In Song

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Electronics and Telecommunications Research Institute
Gwangju Institute of Science and Technology

Research output: Contribution to journal › Journal article › peer-review

4 Scopus citations

Abstract

Modulation-doped Si_0.8Ge_0.2 pMOSFETs have been successfully fabricated through a well-controlled boron δ-doping (doses of 1 × 10¹²-5 × 10¹² cm^-2) by reduced pressure chemical vapor deposition, and their DC and RF characteristics have been investigated. It is seen that the modulation doping, which shifts the hole gas from the Si-cap/Si_0.8Ge_0.2 interface to the centrum of the Si_0.8Ge_0.2 quantum well, effectively improves the device's transconductance (g_m), driving-current, cut-off frequency (f_T), and gate-voltage swing, without a degradation in devices' turn-off characteristics. In addition, a reduction in NF_min is observed in the modulation-doped Si_0.8Ge _0.2 pMOSFETs, responsible for the increased g_m and the reduced gate capacitance. The 1/f noise in Si_0.8Ge_0.2 pMOSFETs is also proven to be lower than that of the Si control, regardless of modulation doping. This device design is well suitable for high-speed and low-noise applications.

Original language	English
Pages (from-to)	315-320
Number of pages	6
Journal	Solid-State Electronics
Volume	48
Issue number	2
DOIs	https://doi.org/10.1016/S0038-1101(03)00317-4
State	Published - 2004.02

Keywords

1/f noise
Cut-off frequency
Modulation doping
MOSFET
SiGe
Transconductance

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10.1016/S0038-1101(03)00317-4

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@article{78e189881d274f2b876ba4822cabae7e,

title = "DC and RF characteristics of RPCVD grown modulation doped Si 0.8Ge0.2 pMOSFETs",

abstract = "Modulation-doped Si0.8Ge0.2 pMOSFETs have been successfully fabricated through a well-controlled boron δ-doping (doses of 1 × 1012-5 × 1012 cm-2) by reduced pressure chemical vapor deposition, and their DC and RF characteristics have been investigated. It is seen that the modulation doping, which shifts the hole gas from the Si-cap/Si0.8Ge0.2 interface to the centrum of the Si0.8Ge0.2 quantum well, effectively improves the device's transconductance (gm), driving-current, cut-off frequency (fT), and gate-voltage swing, without a degradation in devices' turn-off characteristics. In addition, a reduction in NFmin is observed in the modulation-doped Si0.8Ge 0.2 pMOSFETs, responsible for the increased gm and the reduced gate capacitance. The 1/f noise in Si0.8Ge0.2 pMOSFETs is also proven to be lower than that of the Si control, regardless of modulation doping. This device design is well suitable for high-speed and low-noise applications.",

keywords = "1/f noise, Cut-off frequency, Modulation doping, MOSFET, SiGe, Transconductance",

author = "Song, \{Young Joo\} and Kim, \{Sang Hoon\} and Lee, \{Sang Heung\} and Bae, \{Hyun Chul\} and Kang, \{Jin Young\} and Shim, \{Kyu Hwan\} and Kim, \{Joeng Hoon\} and Song, \{Jong In\}",

year = "2004",

month = feb,

doi = "10.1016/S0038-1101(03)00317-4",

language = "English",

volume = "48",

pages = "315--320",

journal = "Solid-State Electronics",

issn = "0038-1101",

number = "2",

}

TY - JOUR

T1 - DC and RF characteristics of RPCVD grown modulation doped Si 0.8Ge0.2 pMOSFETs

AU - Song, Young Joo

AU - Kim, Sang Hoon

AU - Lee, Sang Heung

AU - Bae, Hyun Chul

AU - Kang, Jin Young

AU - Shim, Kyu Hwan

AU - Kim, Joeng Hoon

AU - Song, Jong In

PY - 2004/2

Y1 - 2004/2

N2 - Modulation-doped Si0.8Ge0.2 pMOSFETs have been successfully fabricated through a well-controlled boron δ-doping (doses of 1 × 1012-5 × 1012 cm-2) by reduced pressure chemical vapor deposition, and their DC and RF characteristics have been investigated. It is seen that the modulation doping, which shifts the hole gas from the Si-cap/Si0.8Ge0.2 interface to the centrum of the Si0.8Ge0.2 quantum well, effectively improves the device's transconductance (gm), driving-current, cut-off frequency (fT), and gate-voltage swing, without a degradation in devices' turn-off characteristics. In addition, a reduction in NFmin is observed in the modulation-doped Si0.8Ge 0.2 pMOSFETs, responsible for the increased gm and the reduced gate capacitance. The 1/f noise in Si0.8Ge0.2 pMOSFETs is also proven to be lower than that of the Si control, regardless of modulation doping. This device design is well suitable for high-speed and low-noise applications.

AB - Modulation-doped Si0.8Ge0.2 pMOSFETs have been successfully fabricated through a well-controlled boron δ-doping (doses of 1 × 1012-5 × 1012 cm-2) by reduced pressure chemical vapor deposition, and their DC and RF characteristics have been investigated. It is seen that the modulation doping, which shifts the hole gas from the Si-cap/Si0.8Ge0.2 interface to the centrum of the Si0.8Ge0.2 quantum well, effectively improves the device's transconductance (gm), driving-current, cut-off frequency (fT), and gate-voltage swing, without a degradation in devices' turn-off characteristics. In addition, a reduction in NFmin is observed in the modulation-doped Si0.8Ge 0.2 pMOSFETs, responsible for the increased gm and the reduced gate capacitance. The 1/f noise in Si0.8Ge0.2 pMOSFETs is also proven to be lower than that of the Si control, regardless of modulation doping. This device design is well suitable for high-speed and low-noise applications.

KW - 1/f noise

KW - Cut-off frequency

KW - Modulation doping

KW - MOSFET

KW - SiGe

KW - Transconductance

UR - https://www.scopus.com/pages/publications/0242335140

U2 - 10.1016/S0038-1101(03)00317-4

DO - 10.1016/S0038-1101(03)00317-4

M3 - Journal article

AN - SCOPUS:0242335140

SN - 0038-1101

VL - 48

SP - 315

EP - 320

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 2

ER -

DC and RF characteristics of RPCVD grown modulation doped Si _0.8Ge_0.2 pMOSFETs

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Keywords

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