Defect characterization of Si∗-Implanted GaAs by monoenergetic positron beam technique

J. L. Lee; K. H. Shim; S. Tanigawa; A. Uedono; J. S. Kim; H. M. Park; D. S. Ma

Defect characterization of Si^∗-Implanted GaAs by monoenergetic positron beam technique

J. L. Lee^*
, K. H. Shim
, S. Tanigawa
, A. Uedono
, J. S. Kim
, H. M. Park
, D. S. Ma

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Electronics and Telecommunications Research Institute
University of Tsukuba

Research output: Contribution to conference › Conference paper › peer-review

Abstract

Monoenergetic positrons with variable energies were used to study the depth distribution of implantation-induced vacancy-type defects in undoped GaAs and p-type Si. In B⁺- and As⁺-implanted Si substrates, paraboli-type distributions of vacancy-type defects were observed. In Si⁺-implanted GaAs, the concentration of vacancy-type defect decreased continuously with increasing depth below the surface. The distribution of defects changed into parabolic-type in annealing the Si⁺-implanted GaAs above the temperature of 900°C.

Original language	English
Title of host publication	ESSDERC 1988 - 18th European Solid State Device Research Conference
Editors	J.-P. Nougier, D. Gasquet
Publisher	IEEE Computer Society
Pages	C4457-C4460
ISBN (Electronic)	2868830994
ISBN (Print)	9782868830999
State	Published - 1988
Event	18th European Solid State Device Research Conference, ESSDERC 1988 - Montpellier, France Duration: 1988.09.13 → 1988.09.16

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Conference

Conference	18th European Solid State Device Research Conference, ESSDERC 1988
Country/Territory	France
City	Montpellier
Period	88.09.13 → 88.09.16

Cite this

Lee, J. L., Shim, K. H., Tanigawa, S., Uedono, A., Kim, J. S., Park, H. M., & Ma, D. S. (1988). Defect characterization of Si^∗-Implanted GaAs by monoenergetic positron beam technique. In J.-P. Nougier, & D. Gasquet (Eds.), ESSDERC 1988 - 18th European Solid State Device Research Conference (pp. C4457-C4460). Article 5436949 (European Solid-State Device Research Conference). IEEE Computer Society.

@inproceedings{6e1fb9447cdc4bcb88240eeb70f8648e,

title = "Defect characterization of Si∗-Implanted GaAs by monoenergetic positron beam technique",

abstract = "Monoenergetic positrons with variable energies were used to study the depth distribution of implantation-induced vacancy-type defects in undoped GaAs and p-type Si. In B+- and As+-implanted Si substrates, paraboli-type distributions of vacancy-type defects were observed. In Si+-implanted GaAs, the concentration of vacancy-type defect decreased continuously with increasing depth below the surface. The distribution of defects changed into parabolic-type in annealing the Si+-implanted GaAs above the temperature of 900°C.",

author = "Lee, \{J. L.\} and Shim, \{K. H.\} and S. Tanigawa and A. Uedono and Kim, \{J. S.\} and Park, \{H. M.\} and Ma, \{D. S.\}",

note = "Publisher Copyright: {\textcopyright} 1988 Les Editions de Physique.; 18th European Solid State Device Research Conference, ESSDERC 1988 ; Conference date: 13-09-1988 Through 16-09-1988",

year = "1988",

language = "English",

isbn = "9782868830999",

series = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "C4457--C4460",

editor = "J.-P. Nougier and D. Gasquet",

booktitle = "ESSDERC 1988 - 18th European Solid State Device Research Conference",

}

Lee, JL, Shim, KH, Tanigawa, S, Uedono, A, Kim, JS, Park, HM & Ma, DS 1988, Defect characterization of Si^∗-Implanted GaAs by monoenergetic positron beam technique. in J-P Nougier & D Gasquet (eds), ESSDERC 1988 - 18th European Solid State Device Research Conference., 5436949, European Solid-State Device Research Conference, IEEE Computer Society, pp. C4457-C4460, 18th European Solid State Device Research Conference, ESSDERC 1988, Montpellier, France, 88.09.13.

Defect characterization of Si^∗-Implanted GaAs by monoenergetic positron beam technique. / Lee, J. L.; Shim, K. H.; Tanigawa, S. et al.
ESSDERC 1988 - 18th European Solid State Device Research Conference. ed. / J.-P. Nougier; D. Gasquet. IEEE Computer Society, 1988. p. C4457-C4460 5436949 (European Solid-State Device Research Conference).

Research output: Contribution to conference › Conference paper › peer-review

TY - GEN

T1 - Defect characterization of Si∗-Implanted GaAs by monoenergetic positron beam technique

AU - Lee, J. L.

AU - Shim, K. H.

AU - Tanigawa, S.

AU - Uedono, A.

AU - Kim, J. S.

AU - Park, H. M.

AU - Ma, D. S.

PY - 1988

Y1 - 1988

N2 - Monoenergetic positrons with variable energies were used to study the depth distribution of implantation-induced vacancy-type defects in undoped GaAs and p-type Si. In B+- and As+-implanted Si substrates, paraboli-type distributions of vacancy-type defects were observed. In Si+-implanted GaAs, the concentration of vacancy-type defect decreased continuously with increasing depth below the surface. The distribution of defects changed into parabolic-type in annealing the Si+-implanted GaAs above the temperature of 900°C.

AB - Monoenergetic positrons with variable energies were used to study the depth distribution of implantation-induced vacancy-type defects in undoped GaAs and p-type Si. In B+- and As+-implanted Si substrates, paraboli-type distributions of vacancy-type defects were observed. In Si+-implanted GaAs, the concentration of vacancy-type defect decreased continuously with increasing depth below the surface. The distribution of defects changed into parabolic-type in annealing the Si+-implanted GaAs above the temperature of 900°C.

UR - https://www.scopus.com/pages/publications/84907770580

M3 - Conference paper

AN - SCOPUS:84907770580

SN - 9782868830999

T3 - European Solid-State Device Research Conference

SP - C4457-C4460

BT - ESSDERC 1988 - 18th European Solid State Device Research Conference

A2 - Nougier, J.-P.

A2 - Gasquet, D.

PB - IEEE Computer Society

T2 - 18th European Solid State Device Research Conference, ESSDERC 1988

Y2 - 13 September 1988 through 16 September 1988

ER -

Defect characterization of Si^∗-Implanted GaAs by monoenergetic positron beam technique

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