Defects in electron and neutron irradiated n-GaN: Disordered regions versus point defects

Alexander Y. Polyakov; Nikolai B. Smirnov; Anatoliy V. Govorkov; Alexander V. Markov; Cheul Ro Lee; In Hwan Lee; Nikolai G. Kolin; Denis I. Merkurisov; Vladimir M. Boiko; James S. Wright; Stephen J. Pearton

doi:10.1557/proc-0955-i07-46

Defects in electron and neutron irradiated n-GaN: Disordered regions versus point defects

Alexander Y. Polyakov
, Nikolai B. Smirnov
, Anatoliy V. Govorkov
, Alexander V. Markov
, Cheul Ro Lee
, In Hwan Lee
, Nikolai G. Kolin
, Denis I. Merkurisov
, Vladimir M. Boiko
, James S. Wright
, Stephen J. Pearton

Information Materials Engineering

Institute of Rare Metals
Jeonbuk National University
Karpov Institute of Physical Chemistry
University of Florida

Research output: Contribution to conference › Conference paper › peer-review

2 Scopus citations

Abstract

Effects of 10 MeV electron and fast reactor neutron irradiations on carrier removal rate and deep traps spectra were compared for undoped n-GaN samples. It is shown that for electron irradiation the carrier removal rate is well accounted for by the difference in introduction rates of nitrogen-vacancy- related donors with activation energy 0.2 eV and of nitrogen-interstitial- related acceptors at E_c-1.2 eV. In the case of neutron irradiation the introduction rate of all deep traps was much lower than the carrier removal rate indicating that the main contribution to electron removal was due to disordered regions. These regions give rise to a marked persistent photocapacitance signal and a hole-trap-like feature in deep traps spectra. The Fermi level position in the core of disordered regions is located near E _c-(0.85-1) eV.

Original language	English
Title of host publication	Advances in III-V Nitride Semiconductor Materials and Devices
Publisher	Materials Research Society
Pages	245-247
Number of pages	3
ISBN (Print)	9781604234114
DOIs	https://doi.org/10.1557/proc-0955-i07-46
State	Published - 2006
Event	2006 MRS Fall Meeting - Boston, MA, United States Duration: 2006.11.27 → 2006.12.1

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	955
ISSN (Print)	0272-9172

Conference

Conference	2006 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	06.11.27 → 06.12.1

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Mechanical
Physics & Astronomy

Access to Document

10.1557/proc-0955-i07-46

Cite this

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Lee, C. R., Lee, I. H., Kolin, N. G., Merkurisov, D. I., Boiko, V. M., Wright, J. S., & Pearton, S. J. (2006). Defects in electron and neutron irradiated n-GaN: Disordered regions versus point defects. In Advances in III-V Nitride Semiconductor Materials and Devices (pp. 245-247). (Materials Research Society Symposium Proceedings; Vol. 955). Materials Research Society. https://doi.org/10.1557/proc-0955-i07-46

@inproceedings{e892deb42ece4fa08af0059150763d99,

title = "Defects in electron and neutron irradiated n-GaN: Disordered regions versus point defects",

abstract = "Effects of 10 MeV electron and fast reactor neutron irradiations on carrier removal rate and deep traps spectra were compared for undoped n-GaN samples. It is shown that for electron irradiation the carrier removal rate is well accounted for by the difference in introduction rates of nitrogen-vacancy- related donors with activation energy 0.2 eV and of nitrogen-interstitial- related acceptors at Ec-1.2 eV. In the case of neutron irradiation the introduction rate of all deep traps was much lower than the carrier removal rate indicating that the main contribution to electron removal was due to disordered regions. These regions give rise to a marked persistent photocapacitance signal and a hole-trap-like feature in deep traps spectra. The Fermi level position in the core of disordered regions is located near E c-(0.85-1) eV.",

author = "Polyakov, \{Alexander Y.\} and Smirnov, \{Nikolai B.\} and Govorkov, \{Anatoliy V.\} and Markov, \{Alexander V.\} and Lee, \{Cheul Ro\} and Lee, \{In Hwan\} and Kolin, \{Nikolai G.\} and Merkurisov, \{Denis I.\} and Boiko, \{Vladimir M.\} and Wright, \{James S.\} and Pearton, \{Stephen J.\}",

year = "2006",

doi = "10.1557/proc-0955-i07-46",

language = "English",

isbn = "9781604234114",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "245--247",

booktitle = "Advances in III-V Nitride Semiconductor Materials and Devices",

note = "2006 MRS Fall Meeting ; Conference date: 27-11-2006 Through 01-12-2006",

}

Polyakov, AY, Smirnov, NB, Govorkov, AV, Markov, AV, Lee, CR, Lee, IH, Kolin, NG, Merkurisov, DI, Boiko, VM, Wright, JS & Pearton, SJ 2006, Defects in electron and neutron irradiated n-GaN: Disordered regions versus point defects. in Advances in III-V Nitride Semiconductor Materials and Devices. Materials Research Society Symposium Proceedings, vol. 955, Materials Research Society, pp. 245-247, 2006 MRS Fall Meeting, Boston, MA, United States, 06.11.27. https://doi.org/10.1557/proc-0955-i07-46

Defects in electron and neutron irradiated n-GaN: Disordered regions versus point defects. / Polyakov, Alexander Y.; Smirnov, Nikolai B.; Govorkov, Anatoliy V. et al.
Advances in III-V Nitride Semiconductor Materials and Devices. Materials Research Society, 2006. p. 245-247 (Materials Research Society Symposium Proceedings; Vol. 955).

Research output: Contribution to conference › Conference paper › peer-review

TY - GEN

T1 - Defects in electron and neutron irradiated n-GaN

T2 - 2006 MRS Fall Meeting

AU - Polyakov, Alexander Y.

AU - Smirnov, Nikolai B.

AU - Govorkov, Anatoliy V.

AU - Markov, Alexander V.

AU - Lee, Cheul Ro

AU - Lee, In Hwan

AU - Kolin, Nikolai G.

AU - Merkurisov, Denis I.

AU - Boiko, Vladimir M.

AU - Wright, James S.

AU - Pearton, Stephen J.

PY - 2006

Y1 - 2006

N2 - Effects of 10 MeV electron and fast reactor neutron irradiations on carrier removal rate and deep traps spectra were compared for undoped n-GaN samples. It is shown that for electron irradiation the carrier removal rate is well accounted for by the difference in introduction rates of nitrogen-vacancy- related donors with activation energy 0.2 eV and of nitrogen-interstitial- related acceptors at Ec-1.2 eV. In the case of neutron irradiation the introduction rate of all deep traps was much lower than the carrier removal rate indicating that the main contribution to electron removal was due to disordered regions. These regions give rise to a marked persistent photocapacitance signal and a hole-trap-like feature in deep traps spectra. The Fermi level position in the core of disordered regions is located near E c-(0.85-1) eV.

AB - Effects of 10 MeV electron and fast reactor neutron irradiations on carrier removal rate and deep traps spectra were compared for undoped n-GaN samples. It is shown that for electron irradiation the carrier removal rate is well accounted for by the difference in introduction rates of nitrogen-vacancy- related donors with activation energy 0.2 eV and of nitrogen-interstitial- related acceptors at Ec-1.2 eV. In the case of neutron irradiation the introduction rate of all deep traps was much lower than the carrier removal rate indicating that the main contribution to electron removal was due to disordered regions. These regions give rise to a marked persistent photocapacitance signal and a hole-trap-like feature in deep traps spectra. The Fermi level position in the core of disordered regions is located near E c-(0.85-1) eV.

UR - https://www.scopus.com/pages/publications/40949083572

U2 - 10.1557/proc-0955-i07-46

DO - 10.1557/proc-0955-i07-46

M3 - Conference paper

AN - SCOPUS:40949083572

SN - 9781604234114

T3 - Materials Research Society Symposium Proceedings

SP - 245

EP - 247

BT - Advances in III-V Nitride Semiconductor Materials and Devices

PB - Materials Research Society

Y2 - 27 November 2006 through 1 December 2006

ER -

Defects in electron and neutron irradiated n-GaN: Disordered regions versus point defects

Abstract

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